Datasheet > HFA120FA120P_10

HFA120FA120P_10

更新时间： 2024-11-07 10:47:47

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	129K
描述
HEXFRED Ultrafast Soft Recovery Diode, 120 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HFA120FA120P_10 数据手册

HFA120FA120P

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 120 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

SOT-227

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

PRODUCT SUMMARY

The dual diode series configuration (HFA120FA120P) is

used for output rectification or freewheeling/clamping

operation and high voltage application.

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built.

These modules are intended for general applications such

as HV power supplies, electronic welders, motor control and

inverters.

V_R

1200 V

2.8 V

V_F(typical)

t_rr(typical)

145 ns

_F(DC)at T_Cper leg

60 A at 86 °C

60 A at 62 °C

I_F(AV)at T_Cper leg

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

UNITS

Cathode to anode voltage

V_R

per leg

Continuous forward current

per module

I_F

T_C= 86 °C

T_J= 25 °C

120

350

130

337

135

2500

Single pulse forward current

I_FSM

I_FRM

Maximum repetitive forward current

Rated V_R,square wave, 20 kHz, T_C= 60 °C

T_C= 25 °C

Maximum power dissipation

RMS isolation voltage

P_D

_C= 100 °C

V_ISOL

Any terminal to case, t = 1 minute

Operating junction and storage

temperature range

T_J, T_Stg

- 55 to + 150

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode

breakdown voltage

V_BR

I_R= 100 μA

1200

I_F= 60 A

2.8

3.6

2.7

2.0

2.7

4.0

5.3

Forward voltage

V_FM

I_F= 120 A

I_F= 60 A, T_J= 125 °C

V_R= V_Rrated

μA

Reverse leakage current

I_RM

T_J= 150 °C, V_R= V_Rrated

Document Number: 94608

Revision: 22-Jul-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与HFA120FA120P_10相关器件

型号	品牌	获取价格	描述	数据表
HFA120FA60	INFINEON	获取价格	HEXFRED ULTRAFAST SOFT RECOVERY DIODE
HFA120FA60P	VISHAY	获取价格	HEXFRED® Ultrafast Soft Recovery Diode, 60 A
HFA120MD40C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA120MD40CPBF	INFINEON	获取价格	暂无描述
HFA120MD40D	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA1212	INTERSIL	获取价格	Dual 350MHz, Low Power Closed Loop Buffer Amplifier
HFA1212/883	INTERSIL	获取价格	Dual, High Speed, Low Power, Video Closed Loop Buffer
HFA1212_04	INTERSIL	获取价格	Dual 350MHz, Low Power Closed Loop Buffer Amplifier
HFA1212883	INTERSIL	获取价格	Dual, High Speed, Low Power, Video Closed Loop Buffer
HFA1212IB	INTERSIL	获取价格	Dual 350MHz, Low Power Closed Loop Buffer Amplifier