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HFA08TB60PBF_11 PDF预览

HFA08TB60PBF_11

更新时间: 2024-02-07 20:00:49
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
8页 176K
描述
HEXFRED Ultrafast Soft Recovery Diode, 8 A

HFA08TB60PBF_11 数据手册

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VS-HFA08TB60PbF  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
Base  
cathode  
2
• Reduced snubbing  
• Reduced parts count  
DESCRIPTION  
1
3
VS-HFA08TB60PbF is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 8 A continuous current, the  
VS-HFA08TB60PbF is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA08TB60PbF is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
Cathode Anode  
TO-220AC  
PRODUCT SUMMARY  
Package  
TO-220AC  
8 A  
IF(AV)  
VR  
600 V  
VF at IF  
1.7 V  
trr (typ.)  
TJ max.  
Diode variation  
18 ns  
150 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8
IFSM  
IFRM  
60  
A
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 94047  
Revision: 24-May-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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