HFA08TB60S

更新时间： 2024-01-23 06:57:23

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管软恢复二极管
页数	文件大小	规格书
7页	198K
描述
Ultrafast, Soft Recovery Diode

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HFA08TB60S 数据手册

Bulletin PD -20607 rev. B 12/00

HFA08TB60S

HEXFRED

Ultrafast, Soft Recovery Diode

Features

V_R= 600V

V_F(typ.)* = 1.4V

_F(AV)= 8.0A

Q_rr(typ.)= 65nC

(K)

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

BASE

• Very Low Q_rr

• Specified at Operating Conditions

I_RRM= 5.0A

t_rr(typ.) = 18ns

di_(rec)M/dt (typ.) = 240A/µs

Benefits

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

(N/C)

(A)

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques

it features a superb combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available. With basic ratings of 600

volts and 8 amps continuous current, the HFA08TB60S is especially well suited for

use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast

recovery time, the HEXFRED product line features extremely low values of peak

recovery current (I_RRM) and does not exhibit any tendency to "snap-off" during the

D²Pak

t_bportion of recovery. The HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is

ideally suited for applications in power supplies (PFC Boost diode) and power

conversion systems (such as inverters), motor drives, and many other similar

applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max.

Units

V_R

Cathode-to-AnodeVoltage

600

8.0

I_F@ T_C= 100°C

I_FSM

I_FRM

ContinuousForwardCurrent

SinglePulseForwardCurrent

MaximumRepetitiveForwardCurrent

MaximumPowerDissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C MaximumPowerDissipation

T_J

T_STG

OperatingJunctionand

StorageTemperatureRange

-55 to +150

°C

* 125°C

12 3 4 5 6 7

中文翻译

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