Datasheet > HF8-28S_07

HF8-28S_07

更新时间： 2024-11-11 11:52:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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HF8-28S_07 数据手册

HF8-28S

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI HF8-28S is a common

Emitter transistor, designed for

broadband amplifier operations in

military, commercial and amateur

communication equipment.

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

• P_G= 21 dB min. at 8 W/30 MHz

• IMD₃= -30 dBc max. at 8 W^(PEP)

• Omnigold™ Metalization System

ØC

MAXIMUM RATINGS

#8-32 UNC-2A

I_C

1.0 A

65 V

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

35 V

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

65 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

4.0 V

13.0 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

13.5 °C/W

T_STG

θ_JC

ORDER CODE: ASI10736

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_E= 10 mA

4.0

BV_CES

BV_CEO

BV_EBO

I_CBO

_CB= 30 V

_CE= 5.0 V

1.0

---

h_FE

I_C= 200 mA

P_IN= 1.0 W

5.0

C_OB

G_P

_CB= 30 V

_CC= 28 V

f = 1.0 MHz

f = 150 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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