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HF8-28S_1 PDF预览

HF8-28S_1

更新时间: 2024-11-11 05:35:55
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

HF8-28S_1 数据手册

  
HF8-28S  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI HF8-28S is a common  
Emitter transistor, designed for  
broadband amplifier operations in  
military, commercial and amateur  
communication equipment.  
PACKAGE STYLE .380 4L STUD  
A
.112x45°  
FEATURES:  
C
B
PG = 21 dB min. at 8 W/30 MHz  
IMD3 = -30 dBc max. at 8 W(PEP)  
Omnigold™ Metalization System  
E
E
ØC  
B
I
D
H
J
MAXIMUM RATINGS  
G
#8-32 UNC-2A  
IC  
1.0 A  
65 V  
F
E
VCBO  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
35 V  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
65 V  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
4.0 V  
13.0 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
13.5 °C/W  
J
TSTG  
θJC  
ORDER CODE: ASI10736  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 200 mA  
IC = 200 mA  
IC = 200 mA  
IE = 10 mA  
65  
65  
35  
4.0  
V
BVCES  
BVCEO  
BVEBO  
ICBO  
V
V
V
V
CB = 30 V  
CE = 5.0 V  
1.0  
---  
mA  
---  
hFE  
V
IC = 200 mA  
PIN = 1.0 W  
5.0  
10  
COB  
GP  
V
CB = 30 V  
CC = 28 V  
f = 1.0 MHz  
f = 150 MHz  
15  
pF  
dB  
V
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. B  
1/1  

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