Datasheet > HF30-28F_07

HF30-28F_07

更新时间： 2024-11-12 11:57:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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HF30-28F_07 数据手册

HF30-28F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI HF30-28F is a 28 V epitaxial

RF NPN planar transistor designed

primarily for SSB communications.

The device utilizes emitter ballasting

for improved ruggedness and

reliability.

PACKAGE STYLE .380 4L FLG

.112 x 45°

Ø.125 NOM.

FULL R

FEATURES:

.125

• P_G= 18 dB min. at 30 W/30 MHz

• IMD₃= -30 dBc max. at 30 W^(PEP)

• Omnigold™ Metalization System

• P_OUT30 W @ 30 MHz

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

I_C

4.5 A

65 V

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.004 / 0.10

.085 / 2.16

.160 / 4.06

36 V

4.0 V

.240 / 6.10

80 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

2.2 °C/W

ORDER CODE: ASI10604

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_E= 10 mA

4.0

BV_CES

BV_CEO

BV_EBO

I_CBO

_CB= 30 V

_CE= 5.0 V

1.0

---

h_FE

I_C= 500 mA

200

C_OB

V_CB= 30 V

f = 1.0 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. D

1/2

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