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HF30-28S PDF预览

HF30-28S

更新时间: 2024-11-10 22:33:23
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

HF30-28S 数据手册

  
HF30-28S  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 4L STUD  
The ASI HF30-28S is Designed for  
.112x45°  
A
FEATURES:  
C
B
· PG = 20 dB min. at 30 W/30 MHz  
· IMD3 = -30 dBc max. at 30 W(PEP)  
· Omnigold™ Metalization System  
E
E
ØC  
B
I
D
H
J
MAXIMUM RATINGS  
G
#8-32 UNC-2A  
F
IC  
5.0 A  
65 V  
E
VCB  
VCE  
MINIMUM  
MAXIMUM  
DIM  
inches / mm  
inches / mm  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
35 V  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
VEBO  
PDISS  
TJ  
4.0 V  
60 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
2.9 OC/W  
TSTG  
qJC  
J
ORDER CODE: ASI10605  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
BVCES  
BVCEO  
BVEBO  
ICES  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 200 mA  
IC = 200 mA  
IE = 10 mA  
VCE = 30 V  
VCE = 30 V  
VCE = 5.0 V  
65  
65  
35  
4.0  
---  
---  
V
---  
V
---  
V
---  
V
10  
1.0  
200  
mA  
mA  
---  
ICBO  
---  
hFE  
IC = 500 mA  
PIN = 7.0 W  
5.0  
COB  
VCB = 30V  
f = 1.0 MHz  
f = 175 MHz  
---  
65  
---  
pF  
GP  
7.6  
60  
dB  
%
VCE = 28 V  
h C  
POUT = 30 W(PEP)  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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