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HER3006G PDF预览

HER3006G

更新时间: 2024-11-24 04:57:27
品牌 Logo 应用领域
固锝 - GOOD-ARK 整流二极管高效整流二极管
页数 文件大小 规格书
2页 150K
描述
Glass Passivated High Efficient Rectifiers

HER3006G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.22
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:800 V最大反向电流:5 µA
最大反向恢复时间:0.075 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

HER3006G 数据手册

 浏览型号HER3006G的Datasheet PDF文件第2页 
HER3001G thru HER3007G  
Glass Passivated High Efficient Rectifiers  
Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes  
Features  
‹ Glass passivated chip  
‹ Ultra fast switching for high efficiency  
‹ Low reverse leakage current  
‹ Low forward voltage drop  
‹ High current capability  
‹ Easily cleaned with Freon, Alcohol, Chlorothene and similar  
solvents  
‹ Plastic material has UL flammabitily classification 94V-0  
Mechanical Data  
‹ Case : JEDEC DO-201AD molded plastic  
‹ Polarity : Color band denotes cathode  
‹ Weight : 0.042 ounce, 1.195 grams  
‹ Mounting position : Any  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HER  
3001G  
HER  
3002G  
HER  
3003G  
HER  
3004G  
HER  
3005G  
HER  
3006G  
HER  
3007G  
Parameter  
Symbols  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
35  
50  
Maximum DC blocking voltage  
Maximum average forward  
100  
1000  
I
3.0  
Amps  
Amps  
@ TA=55oC  
(AV)  
rectified current  
Peak forward surge current  
8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
125.0  
1.3  
Maximum forward voltage at 3.0A DC  
VF  
IR  
1.0  
1.7  
Volts  
Maximum DC reverse current  
at rated DC blocking voltage  
@TJ=25oC  
5.0  
100  
uA  
@TJ=100oC  
nS  
pF  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Typical thermal resistance (Note 3)  
Operating junction temperature range  
Storage temperature range  
trr  
50  
60  
75  
30  
CJ  
RθJA  
TJ  
20  
oC/W  
oC  
-55 to +150  
-55 to +150  
TSTG  
oC  
Notes:  
1. Test condition of Trr: IF=0.5A,IR=1.0A,IRR=0.25A.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal Resistance Junction to Ambient.  
175  

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