HER3003PT thru HER3006PT
Pb
HER3003PT thru HER3006PT
Pb Free Plating Product
30.0 Ampere Dual Common Cathode High Efficiency Rectifier Diode
Unit: inch (mm)
TO-3P/TO-247AD
Features
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
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Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
.142(3.6)
.125(3.2)
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Glass passivated chip junctions
Special for inverter/high power motor control
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
.095(2.4)
High temperature soldering guaranteed:
o
.126(3.2)
260 C, 0.16”(4.06mm)from case for 10 seconds
.110(2.8)
.050(1.25)
.045(1.15)
Mechanical Data
.030(0.75)
.017(0.45)
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Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
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Polarity: As marked
Mounting position: Any
Positive
Common Cathode
Suffix "PT"
Negative
Doubler
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
Common Anode Series Connection
Suffix "PA" Suffix "PD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER3003PT HER3005PT HER3006PT
HER3003PA HER3005PA HER3006PA
HER3003PD HER3005PD HER3006PD
UNIT
SYMBOL
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
30.0
300
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
IR
0.98
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10
500
50
60
145
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
pF
oC
175
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
= 0.5A I = 1 0A Irr = 0.25A.
F R
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
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