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HER3007N PDF预览

HER3007N

更新时间： 2024-11-28 00:56:51
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1083K
描述
30 Ampere Heat Sink Dual Common Anode High Efficiency Rectifier Diodes

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HER3007N 数据手册

 浏览型号HER3007N的Datasheet PDF文件第2页浏览型号HER3007N的Datasheet PDF文件第3页 
HER3001N thru HER3008N  
HER3001N thru HER3008N  
Pb Free Plating Product  
30 Ampere Heat Sink Dual Common Anode High Efficiency Rectifier Diodes  
TO-3PN  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Bottom Side Metal Heat Sink  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,Motor Control,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-3PN open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Series  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 0.65 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "E"  
Negative  
Positive  
Suffix "PT"  
Suffix "N"  
Suffix "D"  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER  
HER  
HER  
HER  
HER  
HER  
HER  
HER  
Characteristic  
Symbol  
Unit  
3001N 3002N 3003N 3004N 3005N 3006N 3007N 3008N  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current @TC = 100°C  
30  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
300  
A
Forward Voltage  
@IF = 15A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
50  
80  
nS  
pF  
°C  
Typical Junction Capacitance (Note 2)  
175  
145  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.09T  
1995 Thinki Semiconductor Co., Ltd.  
©
123

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