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HER3005PD PDF预览

HER3005PD

更新时间: 2024-11-24 12:18:47
品牌 Logo 应用领域
THINKISEMI 整流二极管
页数 文件大小 规格书
2页 714K
描述
30.0 Ampere Dual Common Cathode High Efficiency Rectifier Diode

HER3005PD 数据手册

 浏览型号HER3005PD的Datasheet PDF文件第2页 
HER3003PT thru HER3006PT  
®
HER3003PT thru HER3006PT  
Pb Free Plating Product  
30.0 Ampere Dual Common Cathode High Efficiency Rectifier Diode  
Unit: inch (mm)  
TO-3P/TO-247AD  
Features  
.640(16.25)  
.620(15.75)  
.199(5.05)  
.175(4.45)  
Dual rectifier construction, positive center-tap  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V0  
.142(3.6)  
.125(3.2)  
Glass passivated chip junctions  
Special for inverter/high power motor control  
Low forward voltage, high current capability  
Low thermal resistance  
Low power loss, high efficiency  
.095(2.4)  
High temperature soldering guaranteed:  
o
.126(3.2)  
260 C, 0.16”(4.06mm)from case for 10 seconds  
.110(2.8)  
.050(1.25)  
.045(1.15)  
Mechanical Data  
.030(0.75)  
.017(0.45)  
Cases: TO-3P/TO-247AD molded plastic  
Terminals: Pure tin plated, lead free solderable per  
MIL-STD-750. Method 2026  
.225(5.7)  
.204(5.2)  
.225(5.7)  
.204(5.2)  
Polarity: As marked  
Mounting position: Any  
Positive  
Common Cathode  
Suffix "PT"  
Negative  
Doubler  
Mounting torque: 10in-lbs. Max.  
Weight: 0.2 ounce, 5.6 gram approximately  
Common Anode Series Connection  
Suffix "PA" Suffix "PD"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER3003PT HER3005PT HER3006PT  
HER3003PA HER3005PA HER3006PA  
HER3003PD HER3005PD HER3006PD  
UNIT  
SYMBOL  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=125oC  
30.0  
300  
1.3  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 15.0 A  
VF  
IR  
0.98  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
10  
500  
50  
60  
145  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
pF  
oC  
175  
Operating Junction and Storage  
Temperature Range  
T
J, TSTG  
-55 to +150  
.
= 0.5A I = 1 0A Irr = 0.25A.  
F R  
NOTES : (1) Reverse recovery test conditions I  
(2) Thermal Resistance junction to terminal.  
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Rev.02  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/2  
http://www.thinkisemi.com/  

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