Datasheet > HER3004S

HER3004S

更新时间： 2024-11-28 00:56:51

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
3页	1080K
描述
30 Ampere Heat Sink Dual Series Connection High Efficiency Rectifier Diodes

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数据手册

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HER3004S 数据手册

HER3001S thru HER3008S

Pb Free Plating Product

30 Ampere Heat Sink Dual Series Connection High Efficiency Rectifier Diodes

TO-3PN

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

Bottom Side Metal Heat Sink

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Case

Series

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.65 gram approximately

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "S"

Negative

Positive

Suffix "C"

Suffix "A"

Suffix "D"

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

HER

Characteristic

Symbol

Unit

3001S 3002S 3003S 3004S 3005S 3006S 3007S 3008S

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

300

Forward Voltage

@I_F= 15A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

500

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

°C

Typical Junction Capacitance (Note 2)

175

145

Operating and Storage Temperature Range

T^j, T^STG

-55 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Page 1/3

http://www.thinkisemi.com.tw/

Rev.09T

1995 Thinki Semiconductor Co., Ltd.

12 3

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