Datasheet > HER107SA0G

HER107SA0G

更新时间： 2024-10-30 01:13:11

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描述
High Efficient Rectifiers

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中文翻译

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数据手册

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HER107SA0G 数据手册

HER101S thru HER108S

Taiwan Semiconductor

CREAT BY ART

High Efficient Rectifiers

FEATURES

- High efficiency, low VF

- High current capability

- High reliability

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: A-405

A-405

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Weight: 0.2g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

HER HER HER HER HER HER HER HER

101S 102S 103S 104S 105S 106S 107S 108S

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

V_F

I_R

Maximum instantaneous forward voltage (Note 1)

@ 1 A

1.0

1.3

1.7

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

μA

150

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical thermal resistance

Trr

^OC/W

^OC

R_θJA

T_J

100

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Document Number: DS_D1404017

Version: F14

12 3 4

中文翻译

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HER107-T3-LF	WTE	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKA
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