Datasheet > HER1012CL

HER1012CL

更新时间： 2024-10-30 02:49:55

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	260K
描述
10.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers

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HER1012CL 数据手册

HER1002CL thru HER1012CL

Pb Free Plating Product

10.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers

TO-220AB/TO-220-3L

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

.139(3.55)

MIN

.054(1.39)

.045(1.15)

※ Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

※ Case: Heatsink open metal TO-220AB/TO-220-3L package

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

.1(2.54)

Case

※ Weight: 2.0 gram approximately

Doubler

Series

Negative

Positive

Tandem Polarity

Suffix "CR"

Tandem Polarity

Suffix "CL"

Common Cathode

Suffix "CT"

Common Anode

Suffix "CA"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

HER1003CL

HER1004CL

PARAMETER

HER1010CL

HER1012CL

SYMBOL

HER1006CL

HER1008CL

UNIT

HER1002CL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

10.0

125

IF(AV)

IFSM

(Total Device 2x5.0A=10.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@5.0A(Per Diode/Per Leg)

(Typical)

1.30-1.70

0.85-1.00

1.00-1.30

1.30-1.70

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

35-50

50-75

Trr

1.5

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.11T

http://www.thinkisemi.com.tw/

中文翻译

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与HER1012CL相关器件

型号	品牌	获取价格	描述	数据表
HER1012CR	THINKISEMI	获取价格	10.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers
HER1012CT	THINKISEMI	获取价格	10.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifiers
HER1012FCA	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode High Efficiency Rectifiers
HER1012FCL	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Series Connection High Efficiency Rectifiers
HER1012FCR	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Doubler Polarity High Efficiency Rectifiers
HER1012FCT	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Cathode High Efficiency Rectifiers
HER101-AP-HF	MCC	获取价格	暂无描述
HER101-BP-HF	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,
HER101-E	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,
HER101-F	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,

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