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HEP801

更新时间： 2024-11-12 03:34:35
品牌 Logo 应用领域
DAESAN /
页数 文件大小 规格书
2页 252K
描述
CURRENT 8.0 AMPERES VOLTAGE 50 TO 600 VOLTS

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HEP801 数据手册

 浏览型号HEP801的Datasheet PDF文件第2页 
CURRENT 8.0 Amperes  
VOLTAGE 50 to 600 Volts  
HEP801 THRU HEP806  
Features  
· Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
· Low forward voltage drop  
· High current capability  
ITO-220A  
0.2  
2.7  
0.5  
3.2  
4.5  
10  
· High reliability  
· Low power loss, high effciency  
· High surge current capability  
· High speed switching  
· Low leakage  
0.2  
1.3  
Mechanical Data  
0.2  
0.7  
0.5  
2.4  
5.08  
· Case : JEDEC ITO-220A molded plastic body  
· Terminals : Lead solderable per  
MIL-STD-750, method 2026  
· Polarity : As marked  
· Mounting Position : Any  
PIN 1+  
PIN 2  
PIN 1  
PIN 2+  
Case Negative  
+
CASE  
CASE  
CasePositive  
Suffix"R"  
· Weight : 0.08 ounce, 2.24 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
HEP  
801  
HEP  
802  
HEP  
803  
HEP  
804  
HEP  
805  
HEP  
806  
Symbols  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
100  
Maximum average forward rectified current  
0.375"(9.5mm) lead length @ at TA=100℃  
I
(AV)  
8.0  
Amps  
Amps  
Volts  
Peak forward surge current 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
125  
IFSM  
Maximum instantaneous forward voltage  
at 8.0A  
V
F
1.0  
1.3  
1.7  
Maximum DC reverse current at rated DC  
blocking voltage TA=25℃  
10.0  
100  
μA  
IR  
Maximum DC reverse current at rated DC  
blocking voltage T =125℃  
A
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Typical thermal resistance (Note 3)  
Trr  
50  
80  
80  
50  
ns  
pF  
C
J
2.2  
RθJC  
℃/W  
Operating junction and storage  
temperature range  
T
J
-55 to +150  
-55 to +150  
℃
TSTG  
Notes:  
(1) Test conditions: I  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  
(3) Thermal resistance from junction to case mounting on heatsink.  
F=0.5A, IR=1.0A, Irr=0.25A.  
12

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