Datasheet > HD1L2Q-T2-AZ

HD1L2Q-T2-AZ

更新时间： 2024-02-13 22:43:41

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	514K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89

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HD1L2Q-T2-AZ 数据手册

HD1 SERIES

HD1A4M

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

Conditions

VCB = 60 V, IE = 0

MIN.

TYP.

MAX.

Unit

−

ICBO

100

Note

h^FE1

V^CE= 2.0 V, IC = 0.1 A

V^CE= 2.0 V, IC = 0.5 A

V^CE= 2.0 V, IC = 1.0 A

V^IN= 5.0 V, IC = 0.1 A

V^CE= 5.0 V, IC = 100 μA

200

300

200

Note

h^FE2

DC current gain

−

Note

h^FE3

DC current gain

−

Note

V^OL

Low level output voltage

Low level input voltage

Input resistance

0.2

0.3

Note

V^IL

kΩ

E-to-B resistance

Note PW ≤ 350 μs, duty cycle ≤ 2 %

HD1L2Q

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

Conditions

VCB = 60 V, IE = 0

MIN.

TYP.

MAX.

100

Unit

−

ICBO

Note

h^FE1

V^CE= 2.0 V, IC = 0.1 A

V^CE= 2.0 V, IC = 0.5 A

V^CE= 2.0 V, IC = 1.0 A

V^IN= 5.0 V, IC = 0.8 A

V^CE= 5.0 V, IC = 100 μA

200

300

200

Note

h^FE2

DC current gain

−

Note

h^FE3

DC current gain

−

Note

V^OL

Low level output voltage

Low level input voltage

Input resistance

0.5

0.3

Note

V^IL

329

470

4.7

611

6.11

E-to-B resistance

3.29

kΩ

Note PW ≤ 350 μs, duty cycle ≤ 2 %

HD1F2Q

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

Conditions

VCB = 60 V, IE = 0

MIN.

TYP.

MAX.

100

Unit

−

ICBO

Note

h^FE1

V^CE= 2.0 V, IC = 0.1 A

V^CE= 2.0 V, IC = 0.5 A

V^CE= 2.0 V, IC = 1.0 A

V^IN= 5.0 V, IC = 0.8 A

V^CE= 5.0 V, IC = 100 μA

100

300

200

Note

h^FE2

DC current gain

−

Note

h^FE3

DC current gain

−

Note

V^OL

Low level output voltage

Low level input voltage

Input resistance

0.5

0.3

Note

V^IL

154

220

2.2

286

2.86

E-to-B resistance

1.54

kΩ

Note PW ≤ 350 μs, duty cycle ≤ 2 %

Data Sheet D16182EJ4V0DS

1 2 3 456 7 8

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