DATA SHEET
COMPOUND TRANSISTOR
HD1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
•
•
High current drives such as IC outputs and actuators available
On-chip bias resistor
Low power consumption during drive
HD1 SERIES LISTS
Products
HD1A3M
HD1F3P
HD1L3N
HD1A4M
HD1L2Q
HD1F2Q
HD1A4A
Marking
LP
R1 (kΩ)
1.0
R2 (kΩ)
1.0
10
LQ
2.2
LR
4.7
10
LS
10
10
LT
0.47
0.22
−
4.7
2.2
10
LU
LX
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Symbol
VCBO
Ratings
Unit
V
80
60
VCEO
V
VEBO
10
V
IC(DC)
1.0
A
Note1
2.0
A
IC(pulse)
IB(DC)
Note2
PT
0.02
2.0
A
Total power dissipation
Junction temperature
Storage temperature
W
°C
°C
Tj
Tstg
150
−55 to +150
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %
2. When 0.7 mm × 16 cm2 ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16182EJ4V0DS00 (4th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2006
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