HCTS373MS
Radiation Hardened
Octal Transparent Latch, Three-State
August 1995
Features
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-
Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
1
2
3
4
5
6
7
8
9
VCC
Q7
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
20
19
18 D7
17 D6
16 Q6
15
Q5
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
14 D5
13 D4
12
Q4
GND 10
11 LE
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS373MS is a Radiation Hardened octal transpar-
ent three-state latch with an active-low output enable. The out-
puts are transparent to the inputs when the Latch Enable (LE) is
HIGH. When the Latch Enable (LE) goes LOW, the data is
latched. The Output Enable (OE) controls the three-state outputs.
When the Output Enable (OE) is HIGH, the outputs are in the
high impedance state. The latch operation is independent of the
state of the Output Enable.
OE
Q0
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
LE
D0
D1
Q1
Q2
D2
D3
The HCTS373MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
Q3
GND
The HCTS373MS is supplied in a 20 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCTS373DMSR
TEMPERATURE RANGE
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
PACKAGE
o
o
-55 C to +125 C
20 Lead SBDIP
o
o
HCTS373KMSR
-55 C to +125 C
20 Lead Ceramic Flatpack
20 Lead SBDIP
o
HCTS373D/Sample
HCTS373K/Sample
HCTS373HMSR
+25 C
o
+25 C
Sample
20 Lead Ceramic Flatpack
Die
o
+25 C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518636
File Number 2131.2
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