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HCS241D/SAMPLE

更新时间： 2024-01-02 18:25:17
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动输出元件逻辑集成电路
页数 文件大小 规格书
9页 171K
描述
HC/UH SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDIP20

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HCS241D/SAMPLE 技术参数

生命周期：Obsolete零件包装代码：DIP
包装说明：DIP,针数：20
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.1系列：HC/UH
JESD-30 代码：R-CDIP-T20逻辑集成电路类型：BUS DRIVER
位数：4功能数量：2
端口数量：2端子数量：20
输出特性：3-STATE输出极性：TRUE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
传播延迟（tpd）：21 ns认证状态：Not Qualified
座面最大高度：5.08 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL宽度：7.62 mm
Base Number Matches：1

HCS241D/SAMPLE 数据手册

 浏览型号HCS241D/SAMPLE的Datasheet PDF文件第1页浏览型号HCS241D/SAMPLE的Datasheet PDF文件第2页浏览型号HCS241D/SAMPLE的Datasheet PDF文件第4页浏览型号HCS241D/SAMPLE的Datasheet PDF文件第5页浏览型号HCS241D/SAMPLE的Datasheet PDF文件第6页浏览型号HCS241D/SAMPLE的Datasheet PDF文件第7页 
Specifications HCS241MS  
Absolute Maximum Ratings  
Reliability Information  
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V  
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V  
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA  
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA  
(All Voltage Reference to the VSS Terminal)  
Thermal Resistance  
SBDIP Package. . . . . . . . . . . . . . . . . . . .  
Ceramic Flatpack Package . . . . . . . . . . . 107 C/W 28 C/W  
Maximum Package Power Dissipation at +125 C Ambient  
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W  
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W  
If device power exceeds package dissipation capability, provide heat  
sinking or derate linearly at the following rate:  
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/ C  
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/ C  
θ
θ
JA  
JC  
o
o
72 C/W  
24 C/W  
o
o
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C  
o
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265 C  
o
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
o
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1  
o
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates  
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent  
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed  
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.  
Operating Conditions  
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V  
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max  
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC  
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC  
o
o
Operating Temperature Range (T ) . . . . . . . . . . . . -55 C to +125 C  
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
GROUP  
LIMITS  
MAX  
A SUB-  
PARAMETER  
SYMBOL  
CONDITIONS  
VCC = 5.5V,  
GROUPS  
TEMPERATURE  
MIN  
-
UNITS  
o
Supply Current  
ICC  
1
2, 3  
1
+25 C  
40  
µA  
VIN = VCC or GND  
o
o
+125 C, -55 C  
-
750  
o
Output Current (Sink)  
IOL  
IOH  
VOL  
VCC = VIH = 4.5V,  
VOUT = 0.4V,  
VIL = 0 (Note 2)  
+25 C  
7.2  
6.0  
-7.2  
-6.0  
-
-
mA  
mA  
o
o
2, 3  
1
+125 C, -55 C  
-
-
o
Output Current  
(Source)  
VCC = VIH = 4.5V,  
VOUT = VCC - 0.4V,  
VIL = 0 (Note 2)  
+25 C  
o
o
2, 3  
1, 2, 3  
+125 C, -55 C  
-
o
o
Output Voltage Low  
VCC = 4.5V, VIH = 3.15V,  
VIL = 1.35V, IOL = 50µA  
+25 C, +125 C,  
0.1  
V
V
o
-55 C  
o
o
VCC = 5.5V, VIH = 3.85V,  
VIL = 1.65V, IOL = 50µA  
1, 2, 3  
1, 2, 3  
1, 2, 3  
+25 C, +125 C,  
-
0.1  
o
-55 C  
o
o
Output Voltage High  
VOH  
VCC = 4.5V, VIH = 3.15V,  
VIL = 1.35V, IOH = -50µA  
+25 C, +125 C,  
VCC-  
0.1  
-
-
V
o
-55 C  
o
o
VCC = 5.5V, VIH = 3.85V,  
VIL = 1.35V, IOH = -50µA  
+25 C, +125 C,  
VCC-  
0.1  
V
o
-55 C  
o
Input Leakage  
Current  
IIN  
IOZ  
FN  
VCC = 5.5V  
VIN = VCC or GND  
1
2, 3  
+25 C  
-
-
-
-
-
±0.5  
±5.0  
±1.0  
±50  
-
µA  
o
o
+125 C, -55 C  
o
Three-State Output  
Leakage Current  
VCC = 5.5V, Force  
Voltage = 0V or VCC  
1
+25 C  
µA  
o
o
2, 3  
+125 C, -55 C  
o
o
Noise Immunity  
Functional Test  
VCC = 4.5V, VIH = 3.15V,  
VIL = 1.35V (Note 3)  
7, 8A, 8B  
+25 C, +125 C,  
-
o
-55 C  
NOTES:  
1. All voltages referenced to device GND.  
2. Force/Measure function may be interchanged.  
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.  
Spec Number 518838  
304  
1234567...9

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