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HCS165D/SAMPLE PDF预览

HCS165D/SAMPLE

更新时间: 2024-11-21 21:06:23
品牌 Logo 应用领域
瑞萨 - RENESAS 输出元件逻辑集成电路触发器
页数 文件大小 规格书
9页 226K
描述
HC/UH SERIES, 8-BIT RIGHT PARALLEL IN SERIAL OUT SHIFT REGISTER, COMPLEMENTARY OUTPUT, CDIP16, SIDE BRAZED, CERAMIC, DIP-16

HCS165D/SAMPLE 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.63计数方向:RIGHT
系列:HC/UHJESD-30 代码:R-CDIP-T16
逻辑集成电路类型:PARALLEL IN SERIAL OUT位数:8
功能数量:1端子数量:16
输出极性:COMPLEMENTARY封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE传播延迟(tpd):35 ns
认证状态:Not Qualified座面最大高度:5.08 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
触发器类型:POSITIVE EDGE宽度:7.62 mm
最小 fmax:30 MHzBase Number Matches:1

HCS165D/SAMPLE 数据手册

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HCS165MS  
Radiation Hardened Inverting  
8-Bit Parallel-Input/Serial Output Shift Register  
September 1995  
Features  
Pinouts  
• 3 Micron Radiation Hardened SOS CMOS  
16 LEAD CERAMIC DUAL-IN-LINE  
METAL SEAL PACKAGE (SBDIP)  
MIL-STD-1835 CDIP2-T16, LEAD FINISH C  
TOP VIEW  
• Total Dose 200K RAD (Si)  
• SEP Effective LET No Upsets: >100 MEV-cm2/mg  
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/  
Bit-Day (Typ)  
PL  
CP  
1
2
3
4
5
6
7
8
16 VCC  
15 CE  
14 D3  
13 D2  
12 D1  
11 D0  
10 DS  
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s  
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse  
• Latch-Up Free Under Any Conditions  
D4  
D5  
D6  
D7  
• Fanout (Over Temperature Range)  
- Standard Outputs - 10 LSTTL Loads  
Q7  
9
Q7  
GND  
• Military Temperature Range: -55oC to +125oC  
• Significant Power Reduction Compared to LSTTL ICs  
• DC Operating Voltage Range: 4.5V to 5.5V  
16 LEAD CERAMIC METAL SEAL  
FLATPACK PACKAGE (FLATPACK)  
MIL-STD-1835 CDFP4-F16, LEAD FINISH C  
TOP VIEW  
• Input Logic Levels  
- VIL = 0.3 VCC Max  
- VIH = 0.7 VCC Min  
VCC  
CE  
D3  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
PL  
CP  
• Input Current Levels Ii 5µA at VOL, VOH  
D4  
Description  
D5  
D2  
D6  
D1  
The Intersil HCS165MS is a Radiation Hardened 8-Bit Paral-  
lel-In/Serial-Out Shift Register with complementary serial  
outputs and an asynchronous parallel load input.  
D7  
D0  
Q7  
DS  
Q7  
GND  
The HCS165MS utilizes advanced CMOS/SOS technology  
to achieve high-speed operation. This device is a member of  
radiation hardened, high-speed, CMOS/SOS Logic Family.  
The HCS165MS is supplied in a 16 lead Ceramic flatpack  
(K suffix) or a SBDIP Package (D suffix).  
Ordering Information  
PART NUMBER  
HCS165DMSR  
TEMPERATURE RANGE  
SCREENING LEVEL  
PACKAGE  
16 Lead SBDIP  
o
o
-55 C to +125 C  
Intersil Class S Equivalent  
o
o
HCS165KMSR  
-55 C to +125 C  
Intersil Class S Equivalent  
16 Lead Ceramic Flatpack  
16 Lead SBDIP  
o
HCS165D/Sample  
HCS165K/Sample  
HCS165HMSR  
+25 C  
Sample  
Sample  
Die  
o
+25 C  
16 Lead Ceramic Flatpack  
Die  
o
+25 C  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 518757  
File Number 2481.2  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
240  

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