生命周期: | Active | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.18 |
其他特性: | HIGH Q | 最小击穿电压: | 30 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管电容容差: | 2% | 最小二极管电容比: | 4 |
标称二极管电容: | 82 pF | 二极管元件材料: | SILICON |
二极管类型: | VARIABLE CAPACITANCE DIODE | 频带: | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
JESD-30 代码: | O-LALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大功率耗散: | 0.4 W |
认证状态: | Not Qualified | 最小质量因数: | 250 |
最大重复峰值反向电压: | 30 V | 最大反向电流: | 0.02 µA |
反向测试电压: | 25 V | 子类别: | Varactors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | 变容二极管分类: | HYPERABRUPT |
Base Number Matches: | 1 |
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