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H55S5122DFR-75M PDF预览

H55S5122DFR-75M

更新时间: 2024-11-29 07:02:35
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器
页数 文件大小 规格书
54页 827K
描述
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O

H55S5122DFR-75M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA90,9X15,32Reach Compliance Code:compliant
风险等级:5.84最长访问时间:6 ns
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PBGA-B90
JESD-609代码:e1内存密度:536870912 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:32
端子数量:90字数:16777216 words
字数代码:16000000最高工作温度:85 °C
最低工作温度:-30 °C组织:16MX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA90,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
电源:1.8 V认证状态:Not Qualified
刷新周期:8192连续突发长度:1,2,4,8,FP
最大待机电流:0.0003 A子类别:DRAMs
最大压摆率:0.1 mA标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

H55S5122DFR-75M 数据手册

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O  
Specification of  
512M (16Mx32bit) Mobile SDRAM  
Memory Cell Array  
- Organized as 4banks of 4,194,304 x32  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 1.5 / Jan. 2009  
1

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