是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA90,9X15,32 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 6 ns |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | R-PBGA-B90 |
JESD-609代码: | e1 | 内存密度: | 536870912 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
端子数量: | 90 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 16MX32 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA90,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.8 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.0003 A | 子类别: | DRAMs |
最大压摆率: | 0.1 mA | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H55S5122DFR-A3M | HYNIX |
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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O | |
H55S5132DFR-60M | HYNIX |
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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O | |
H55S5132DFR-75M | HYNIX |
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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O | |
H55S5132DFR-A3M | HYNIX |
获取价格 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O | |
H55S5162DFR-60M | HYNIX |
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512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O | |
H55S5162DFR-75M | HYNIX |
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512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O | |
H55S5162DFR-A3M | HYNIX |
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512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O | |
H55T3R | CONNOR-WINFIELD |
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T3 APPLICATION ENABLE/DISABLE CLOCKS | |
H55T3R-1MHZ | CONNOR-WINFIELD |
获取价格 |
HCMOS Output Clock Oscillator, 1MHz Nom, WELDED, HERMETICALLY SEALED, METAL PACKAGE-8/4 | |
H55T3R-FREQ-OUT27 | CONNOR-WINFIELD |
获取价格 |
HCMOS Output Clock Oscillator, 1MHz Min, 70MHz Max |