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H5609

更新时间: 2024-11-29 07:02:35
品牌 Logo 应用领域
华汕 - HUASHAN 晶体晶体管
页数 文件大小 规格书
1页 108K
描述
NPN SILICON TRANSISTOR

H5609 数据手册

  
NPN S I L I C O N T R A N S I S T O  
Shantou Huashan Electronic Devices Co.,Ltd.  
H5609  
APPLICATIONS  
AUDIO AMPLIFICATION  
TO-92  
ABSOLUTE MAXIMUM RATINGSTa=25℃)  
Tstg——Storage Temperature………………………… -55~150℃  
T ——Junction Temperature…………………………………150℃  
j
P ——Collector Dissipation…………………………………750mW  
C
1EmitterE  
2CollectorC  
3BaseB  
VCBO——Collector-Base Voltage………………………………-25V  
VCEO——Collector-Emitter Voltage……………………………-20V  
VEBO——Emitter-Base Voltage………………………………-5V  
I ——Collector Current……………………………………-1A  
C
ELECTRICAL CHARACTERISTICSTa=25℃)  
Symbol  
Characteristics  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Min  
Typ  
Max Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
25  
20  
5
V
V
V
IC=10μA, IE=0  
IC=1mA, IB=0  
IE=10μAIC=0  
1 μA VCB=20V, IE=0  
HFE  
DC Current Gain  
60  
240  
VCE=2V, IC=500mA  
IC=800mA, IB=80mA  
VCE=2V, IC=500mA  
VCE(sat)  
VBE(ON)  
fT  
Collector- Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain-Bandwidth Product  
Output Capacitance  
0.2 0.5 V  
0.7 1  
180  
V
MHz VCE=2V, IC=500mA  
pF VCB=10V, IE=0f=1MHz  
Cob  
22  
hFE Classification  
A
B
C
60—120  
85—170  
120—240  

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