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H55S5162DFR-75M PDF预览

H55S5162DFR-75M

更新时间: 2024-11-29 07:02:35
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器
页数 文件大小 规格书
55页 698K
描述
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

H55S5162DFR-75M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
JESD-609代码:e1长度:10 mm
内存密度:536870912 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:32MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
电源:1.8 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.00001 A子类别:DRAMs
最大压摆率:0.1 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm

H55S5162DFR-75M 数据手册

 浏览型号H55S5162DFR-75M的Datasheet PDF文件第2页浏览型号H55S5162DFR-75M的Datasheet PDF文件第3页浏览型号H55S5162DFR-75M的Datasheet PDF文件第4页浏览型号H55S5162DFR-75M的Datasheet PDF文件第5页浏览型号H55S5162DFR-75M的Datasheet PDF文件第6页浏览型号H55S5162DFR-75M的Datasheet PDF文件第7页 
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O  
Specification of  
512Mb (32Mx16bit) Mobile SDRAM  
Memory Cell Array  
- Organized as 4banks of 8,388,608 x16  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 1.5 / Feb. 2009  
1

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