Datasheet > H30TB

H30TB

更新时间： 2024-01-27 08:02:45

品牌	Logo	应用领域
NAINA		/
页数	文件大小	规格书
2页	102K
描述
Phase Control Thyristors, 25A

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H30TB 数据手册

25NT

Naina Semiconductor Ltd.

Phase Control Thyristors, 25A

Features

•

Improved glass passivation for high reliability

Exceptional stability at high temperatures

High di/dt and dv/dt capabilities

Metric thread type available

Low thermal resistance

Electrical Ratings (T_J= 25⁰C, unless otherwise noted)

Parameters

Symbol

I_T(AV)

I_T(RMS)

I_TSM

Values Units

Maximum on-state average current 180^O

sinusoidal conduction @ T_J= 85⁰C

Maximum RMS on-state current

Maximum peak, one cycle non-repetitive

surge current

Maximum I²t for fusing

380

800

I²t

A²s

Maximum repetitive peak on and off-state

voltage range

V_RRM

200 to

1600

V_DRM

Maximum peak on-state voltage (T_J= 25⁰C,

I_peak= 79A)

V_TM

1.70

Maximum holding current @ T_J

Maximum latching current @T_J

I_H

I_L

150

400

TO-208AA (TO-48)

Maximum rate of rise of turn-on current,

V_DRM≤ 600V

di/dt

200

100

300

A/µs

T_J= T_Jmaximum,

100% V_DRM

Critical rate of rise of

off-state voltage

dv/dt

V/µs

T_J= T_Jmaximum,

67% V_DRM

Maximum gate

current required to

trigger

anode supply 6 V

resistive load @T_J

I_GT

Maximum gate

voltage required to

trigger

V_GT

2.0

Thermal and Mechanical Specifications (T_J= 25⁰C, unless otherwise noted)

Parameters

Symbol

Values

- 60 to +125

0.9

Units

⁰C

⁰C/W

mkg

Maximum operating junction temperature range

Maximum storage temperature range

Maximum thermal resistance, junction to case

Mounting torque

T_J

T_Stg

R_th(JC)

0.2(min) to 0.3(max)

Approximate weight

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

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