Datasheet > H30TBXX

H30TBXX

更新时间： 2024-02-18 16:13:00

品牌	Logo	应用领域
HIRECT		/
页数	文件大小	规格书
6页	90K
描述
PHASE CONTROL THYRISTOR

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中文翻译

获取价格

数据手册

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H30TBXX 数据手册

PHASE CONTROL THYRISTOR H30TB/TLXX

T_J(⁰C)

Symbol

Characteristics

Conditions

Value

Unit

BLOCKING PARAMETERS

V_RRM

V_DRM

Repetitive peak reverse voltage

Repetitive peak off-stage

voltage

125

200-1600

I_RRM

I_DRM

d_V/d_T

V = V_RRM

@ 67%V_DRM

Repetitive peak reverse current

Repetitive peak off-state current

Rep. rate of change of voltage

125

600

V/μS

CONDUCTING PARAMETERS

180 sine, 50H_Z,

T_C= 85⁰C

I_F(AV)

Average on-state current

I_RMS

I_TSM

RMS on-state current

Surge on-state current

Sine wave, 10mS

without reverse

voltage

500

125

I²t

A²S

1250

1.72

On-state

current = 100A

V_T

Peak on-state voltage drop

V₀

r₀

Threshold voltage

On-state slope resistance

125

0.95

6.40

mΩ

d_IG/d_T= 1A/µS

V_GK= 1V

di/dt

Repetitive rate of rise of current

125

100

A/μS

TRIGGERING PARAMETERS

I_GT

V_D= 5V

Gate trigger current

Gate trigger voltage

100

V_GT

2.50

I_L

I_H

V_D= 5V

Latching Current

Holding Current

300

200

Pulse width

100μSec

P_{G –PEAK}

Maximum Peak Gate Power

V_FGM

I_FGM

Maximum forward gate voltage

Maximum forward gate current

THERMAL & MECHANICAL PARAMETERS

Thermal impedance, 180

R_{TH (J-C)}

⁰C/W

⁰C

Junction to case

Case to heatsink

0.93

0.30

125

conduction, Sine

R_{TH (C-HK)}

Thermal impedance

Maximum Permissible junction

temperature

T_J

T_STG

⁰C

Storage temperature range

-40 - 125

Mounting Torque

For TB

For TL

Weight

gms

1 of 6

HIND RECTIFIERS LTD

12 3 4 5 6

中文翻译

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