25NT
Naina Semiconductor Ltd.
Phase Control Thyristors, 25A
Features
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Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Metric thread type available
Low thermal resistance
Electrical Ratings (TJ = 250C, unless otherwise noted)
Parameters
Symbol
IT(AV)
IT(RMS)
ITSM
Values Units
Maximum on-state average current 180O
25
40
A
A
sinusoidal conduction @ TJ = 850C
Maximum RMS on-state current
Maximum peak, one cycle non-repetitive
surge current
Maximum I2t for fusing
380
800
A
I2t
A2s
V
Maximum repetitive peak on and off-state
voltage range
VRRM
,
200 to
1600
VDRM
Maximum peak on-state voltage (TJ = 250C,
Ipeak = 79A)
VTM
1.70
V
Maximum holding current @ TJ
Maximum latching current @TJ
IH
IL
150
400
mA
mA
TO-208AA (TO-48)
Maximum rate of rise of turn-on current,
VDRM ≤ 600V
di/dt
200
100
300
A/µs
TJ = TJ maximum,
100% VDRM
Critical rate of rise of
off-state voltage
dv/dt
V/µs
TJ = TJ maximum,
67% VDRM
Maximum gate
current required to
trigger
anode supply 6 V
resistive load @TJ
IGT
60
mA
V
Maximum gate
voltage required to
trigger
VGT
2.0
Thermal and Mechanical Specifications (TJ = 250C, unless otherwise noted)
Parameters
Symbol
Values
- 60 to +125
- 60 to +125
0.9
Units
0C
0C
0C/W
mkg
g
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Mounting torque
TJ
TStg
Rth(JC)
0.2(min) to 0.3(max)
14
Approximate weight
1
D-95, Sector 63, Noida – 201301, India
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Tel: 0120-4205450
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Fax: 0120-4273653
sales@nainasemi.com
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www.nainasemi.com