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H1N4148 PDF预览

H1N4148

更新时间: 2024-11-11 23:54:19
品牌 Logo 应用领域
其他 - ETC 二极管开关
页数 文件大小 规格书
3页 38K
描述
Switching Diodes

H1N4148 数据手册

 浏览型号H1N4148的Datasheet PDF文件第2页浏览型号H1N4148的Datasheet PDF文件第3页 
Spec. No. : Preliminary Data  
Issued Date : 1999.05.01  
Revised Date : 1999.09.01  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
H1N4148  
HIGH-SPEED SWITCHING DIODES  
Description  
The H1N4148 is designed for high-speed switching application in hybrid thick and thin-film  
circuits. The device is manufactured by the sillcon epitaxial planar process and packed in plastic  
surface mount package.  
Features  
Ultra-High Speed  
Low Forard Voltage  
Fast Reverse Recovery Time  
Absolute Maximum Ratings  
Characteristics  
Symbol  
VR  
Value  
75  
Unit  
V
Reverse Voltage  
Peak Reverse Voltage  
VRM  
100  
V
Rectified Current (Average)  
Half Wave Rectification with Resist Load  
IO  
150  
mA  
at Tamb=25°C and f50Hz  
IFSM  
Ptot  
Tj  
500  
500  
200  
mA  
mW  
°C  
Surge Forward Current at t<1s and Tj=25°C  
Power Dissipation at Tamb=25°C  
Junction Temperature  
Storage Temperature Range  
Ts  
-65 to +200  
°C  
(Tj=25°C)  
Characteristics  
Characteristics  
Forward Voltage at IF=10mA  
Leakage Current at VR=20V  
at VR=75V  
Symbol  
VF  
Min  
Typ  
Max  
1
25  
5
Unit  
V
nA  
uA  
uA  
-
-
-
-
-
-
-
-
IR  
IR  
IR  
50  
at VR=20V,Tj=150°C  
Reverse Breakdown Voltage  
tested with 100 us Pulses  
Capacitance at VF=VR=0  
V(BR)R  
Ctot  
100  
-
-
-
-
V
4
pF  
Voltage Rise when Switching On  
Tested with 50mA Forward Pulses  
Tp=0.1us, Rise Time<30ns, fp=5~100kHz  
Reverse Recovery Time From  
IF=-IR=10mA to IRR=-1mA,VR=6V RL=100Ω  
Thermal Resistance Function to Ambient Air  
Rectification Efficiency at f =100MHz,VRF=2V  
Vfr  
-
-
2.5  
V
trr  
-
-
-
-
4
ns  
RthA  
ηv  
0.35 K/mW  
-
0.45  
-
-
HSMC Product Specification  

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