Datasheet > H1N4148

H1N4148

更新时间： 2024-02-25 19:25:31

品牌	Logo	应用领域
其他 - ETC		二极管开关
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3页	38K
描述
Switching Diodes

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数据手册

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H1N4148 数据手册

Spec. No. : Preliminary Data

Issued Date : 1999.05.01

Revised Date : 1999.09.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

H1N4148

HIGH-SPEED SWITCHING DIODES

Description

The H1N4148 is designed for high-speed switching application in hybrid thick and thin-film

circuits. The device is manufactured by the sillcon epitaxial planar process and packed in plastic

surface mount package.

Features

• Ultra-High Speed

• Low Forard Voltage

• Fast Reverse Recovery Time

Absolute Maximum Ratings

Characteristics

Symbol

Value

Unit

Reverse Voltage

Peak Reverse Voltage

VRM

100

Rectified Current (Average)

Half Wave Rectification with Resist Load

150

at Tamb=25°C and f≥50Hz

IFSM

Ptot

500

200

°C

Surge Forward Current at t<1s and Tj=25°C

Power Dissipation at Tamb=25°C

Junction Temperature

Storage Temperature Range

-65 to +200

°C

(Tj=25°C)

Characteristics

Forward Voltage at IF=10mA

Leakage Current at VR=20V

at VR=75V

Symbol

Min

Typ

Max

Unit

at VR=20V,Tj=150°C

Reverse Breakdown Voltage

tested with 100 us Pulses

Capacitance at VF=VR=0

V(BR)R

Ctot

100

Voltage Rise when Switching On

Tested with 50mA Forward Pulses

Tp=0.1us, Rise Time<30ns, fp=5~100kHz

Reverse Recovery Time From

IF=-IR=10mA to IRR=-1mA,VR=6V RL=100Ω

Thermal Resistance Function to Ambient Air

Rectification Efficiency at f =100MHz,VRF=2V

Vfr

2.5

trr

RthA

ηv

0.35 K/mW

0.45

HSMC Product Specification

12 3

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