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H1N5817 PDF预览

H1N5817

更新时间: 2024-01-13 10:26:38
品牌 Logo 应用领域
HSMC /
页数 文件大小 规格书
3页 41K
描述
1.0AMP.SCHOTTKY BARRIER RECTIFIERS

H1N5817 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 V最大非重复峰值正向电流:25 A
元件数量:1最高工作温度:125 °C
最大输出电流:1 A最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY

H1N5817 数据手册

 浏览型号H1N5817的Datasheet PDF文件第2页浏览型号H1N5817的Datasheet PDF文件第3页 
Spec. No. : HL200101  
Issued Date : 2000.01.15  
Revised Date : 2001.12.06  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
H1N5817thru H1N5819  
1.0 AMP. SCHOTTKY BARRIER RECTIFIERS  
Features  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Maximum Ratings  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz,  
resistive or inductive load. For capacitive load, derate current by 20%.  
Type Number  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
H1N5817 H1N5818 H1N5819 Units  
20  
14  
20  
30  
21  
30  
40  
28  
40  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
0.375"(9.5mm) Lead Length @ TL=90°C  
1
A
Peak Forward Surge Current, 8.3ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method)  
25  
A
Maximum Instantaneous Forward Voltage @ 1A  
Maximum Instantaneous Forward Voltage @ 3A  
0.45  
0.550  
0.875  
0.600  
0.900  
V
0.750  
V
1 (@ Ta=25°C)  
10 (@ Ta=100°C)  
50  
mA  
mA  
Maximum DC Reverse Current At Rated DC  
Blocking Voltage  
Typical Thermal Resistance (Note 1) RθJA  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range Tj  
°C /W  
pF  
110  
-65 to +125  
-65 to +125  
°C  
Storage Temperature Range TSTG  
°C  
Note 1: Thermal resistance from junction to ambient vertical PC Board Mounting, 0.375”(9.5mm) lead length.  
Note 2: Measured at 1Mhz and applied reverse voltage of 4V D.C.  
H1N5817, H1N5818, H1N5819  
HSMC Product Specification  

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