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H0700KC17F PDF预览

H0700KC17F

更新时间: 2024-02-05 12:40:04
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
15页 319K
描述
Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1190V V(RRM), 1 Element

H0700KC17F 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.8配置:SINGLE
最大直流栅极触发电流:1500 mAJESD-30 代码:O-CXDB-X4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:700 A
断态重复峰值电压:1700 V重复峰值反向电压:1190 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SYMMETRICAL GTO SCRBase Number Matches:1

H0700KC17F 数据手册

 浏览型号H0700KC17F的Datasheet PDF文件第5页浏览型号H0700KC17F的Datasheet PDF文件第6页浏览型号H0700KC17F的Datasheet PDF文件第7页浏览型号H0700KC17F的Datasheet PDF文件第9页浏览型号H0700KC17F的Datasheet PDF文件第10页浏览型号H0700KC17F的Datasheet PDF文件第11页 
WESTCODE An IXYS Company  
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#  
tgq  
tf  
0.9  
VDM  
ITGQ  
VD  
0.1  
0.1  
VGR  
VGQ  
QGQ  
VG(AV)  
IGQ  
tgw  
Diagram 11, Turn-off parameter definitions.  
In addition to the turn-off figures given in characteristic data, the curves of figures 10, 11 & 12 give the  
relationship of IGQ QGQ and tgq to turn-off current (ITGQ) and diGQ/dt. Only typical values of IGQ are given due  
to a great dependence upon the gate circuit impedance, which is a function of gate drive design not the  
device. The tgq is also, to a lesser extent, affected by circuit impedance and as such the maximum figures  
given in data assume a good low impedance circuit design. The curves of figures 17 & 18 give the tail time  
and minimum off time to re-fire device as a function of turn-off current. The minimum off time to re-fire the  
device is distinct from tgw, the gate off time given in characteristics. The GTO thyristor may be safely re-  
triggered when a small amount of tail current is still flowing. In contrast, the gate circuit must remain low  
impedance until the tail current has fallen to zero or below a level which the higher impedance VGR circuit  
can sink without being pulled down below –2 Volts. If the gate circuit is to be switched to a higher  
impedance before the tail current has reached zero then the requirements of diagram 12 must be applied.  
itail  
R
(VGR - itailR)>2V  
Diagram 12.  
VGR  
The figure tgw, as given in the characteristic data, is the maximum time required for the tail current to  
decay to zero. The figure is applicable under all normal operating conditions for the device; provided  
suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this  
time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in  
the curves of figures 13 & 14, the integration period for the losses is nominally taken to the end of the tail  
time (Itail<1A) i.e. :-  
tgt+ttail  
Eoff =  
iv.dt.  
0
Data Sheet. Type H0700KC17# Issue 1  
Page 8 of 15  
April, 2004  

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