Datasheet > H0700KC14Y

H0700KC14Y

更新时间： 2024-01-11 10:47:25

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

H0700KC14Y 技术参数

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC14# to H0700KC17#

The curves of figure 13 give the turn-off energy for a fixed V_Dwith a V_DM=120%V_D, whereas the curves of

figure 14 give the turn-off energy with a fixed value of V_DMand V_D=50%V_DRM. The curves are for energy

against turn-off current/snubber capacitance with a correction for voltage inset as an additional graph

(snubber equivalent to diagram 2 is assumed). From these curves a typical value of turn-off energy for

any combination of I_TGQ/C_sand V_Dor V_DMcan be derived. Only typical data is included, to allow for the

trade-off with on-state voltage (V_TM) which is a feature of these devices, see diagram 13. When

calculating losses in an application, the use of a maximum V_TMand typical E_offwill (under normal

operating frequencies) give a more realistic value. The lowest V_TMdevice of this type would have a

maximum turn-off energy of 1.5x the figure given in the curves of figures 13 & 14.

Trade-off between V & E_off

E_off

Diagram 13.

2.8 Safe turn-off periphery

The necessity to control dv/dt at tun-off for the GTO thyristor implies a trade-off between I_TGQ/V_DM/C_s. This

information is given in the curves of figures 15 & 16. The information in these curves should be

considered as maximum limits and not implied operating conditions, some margin of 'safety' is advised

with the conditions of the curves reserved for occasional excursions. It should be noted that these curves

are derived at maximum junction temperature, however, they may be applied across the full operating

temperature range of the device provided additional precautions are taken. At very low temperature,

(below –10°C) the fall-time of device becomes very rapid and can give rise to very high turn-off voltage

spikes, as such it is advisable to reduce snubber loop inductance to <0.2µH to minimise this effect.

Data Sheet. Type H0700KC14# to H0700KC17# Issue 2

Page 9 of 15

September, 2012

1...6 7 8910 11 12...15

下载PDF

型号	品牌	描述	获取价格	数据表
H0700KC17D	IXYS	Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1360V V(RRM), 1 Element,	获取价格
H0700KC17E	IXYS	Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1275V V(RRM), 1 Element	获取价格
H0700KC17F	IXYS	Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1190V V(RRM), 1 Element	获取价格
H0700KC17G	IXYS	Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1105V V(RRM), 1 Element	获取价格
H0700KC17J	IXYS	Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 935V V(RRM), 1 Element	获取价格
H0700KC17K	IXYS	Silicon Controlled Rectifier, 700 A, 1700 V, SYMMETRICAL GTO SCR	获取价格