Datasheet > H0700KC17F

H0700KC17F

更新时间： 2024-02-04 18:22:28

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
15页	319K
描述
Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1190V V(RRM), 1 Element

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技术参数
数据手册

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H0700KC17F 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.8	配置：	SINGLE
最大直流栅极触发电流：	1500 mA	JESD-30 代码：	O-CXDB-X4
元件数量：	1	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大均方根通态电流：	700 A
断态重复峰值电压：	1700 V	重复峰值反向电压：	1190 V
表面贴装：	YES	端子形式：	UNSPECIFIED
端子位置：	UNSPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SYMMETRICAL GTO SCR	Base Number Matches：	1

H0700KC17F 数据手册

Date:- 16 Apr, 2004

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor

Type H0700KC17#

Absolute Maximum Ratings

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

1700

V_DRM

V_RSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage

1800

100-1360

Non-repetitive peak reverse voltage

MAXIMUM

LIMITS

UNITS

µH

RATINGS

I_TGQ

L_s

Peak turn-off current, (note 2)

Snubber loop inductance, I_TM=I_TGQ, (note 2)

700

0.3

360

700

7.2

I_T(AVM)

I_T(RMS)

I_TSM

I_TSM2

I²t

di/dt_cr

P_FGM

P_RGM

I_FGM

V_RGM

t_off

Mean on-state current, T_sink=55°C (note 3)

Nominal RMS on-state current, 25°C (note 3)

Peak non-repetitive surge current t_p=10ms

Peak non-repetitive surge current, (Note 4)

I²t capacity for fusing t_p=10ms

Critical rate of rise of on-state current, (note 5)

Peak forward gate power

Peak reverse gate power

A²s

A/µs

80×10³

1000

160

100

Peak forward gate current

Peak reverse gate voltage (note 6).

Minimum permissible off-time, I_TM=I_TGQ, (note 2)

Minimum permissible on-time

µs

t_on

T_j

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) V_GK=-2Volts.

2) T_j=125°C, V_D=80%V_DM, V_DM<V_DRM, di_GQ/dt=40A/µs, C_S=1.5µF.

3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, t_p=2ms

5) For di/dt>1000A/µs, consult factory.

6) May exceed this value during turn-off avalanche period.

Data Sheet. Type H0700KC17# Issue 1

Page 1 of 15

April, 2004

12 3 4 5 6 7...15

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