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H0700KC17F PDF预览

H0700KC17F

更新时间: 2024-01-12 23:16:29
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
15页 319K
描述
Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1190V V(RRM), 1 Element

H0700KC17F 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.8配置:SINGLE
最大直流栅极触发电流:1500 mAJESD-30 代码:O-CXDB-X4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:700 A
断态重复峰值电压:1700 V重复峰值反向电压:1190 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SYMMETRICAL GTO SCRBase Number Matches:1

H0700KC17F 数据手册

 浏览型号H0700KC17F的Datasheet PDF文件第1页浏览型号H0700KC17F的Datasheet PDF文件第2页浏览型号H0700KC17F的Datasheet PDF文件第4页浏览型号H0700KC17F的Datasheet PDF文件第5页浏览型号H0700KC17F的Datasheet PDF文件第6页浏览型号H0700KC17F的Datasheet PDF文件第7页 
WESTCODE An IXYS Company  
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#  
Notes on ratings and characteristics.  
1. Maximum Ratings.  
1.1 Off-state voltage ratings.  
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For  
other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak  
voltage which may be applied to the device and does not relate to a DC operating condition. While not  
given in the ratings, VDC should ideally be limited to 60% VDRM in this product.  
Diagram 1.  
1.2 Reverse voltage rating.  
All devices in this series have a minimum VRRM of 100 Volts. If specified at the time of order, a VRRM up to  
80%VDRM is available.  
1.3 Peak turn-off current.  
The figure given in maximum ratings is the highest value for normal operation of the device under  
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves of figures  
15 & 16. The curves are effective over the normal operating range of the device and assume a snubber  
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is  
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be  
applied.  
L
s
R
D
s
C
s
Diagram 2.  
1.4 R.M.S and average current.  
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-  
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,  
values can not be applied to practical applications, as they do not include switching losses.  
1.5 Surge rating and I2t.  
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 4.  
1.6 Snubber loop inductance.  
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see  
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively  
Vs should be limited to 600 Volts to avoid possible device failure.  
Data Sheet. Type H0700KC17# Issue 1  
Page 3 of 15  
April, 2004  

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