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H0700KC17F

更新时间： 2024-02-03 13:49:34
品牌 Logo 应用领域
IXYS 栅栅极
页数 文件大小 规格书
15页 319K
描述
Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1190V V(RRM), 1 Element

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H0700KC17F 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：DISK BUTTON, O-CXDB-X4
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.8配置：SINGLE
最大直流栅极触发电流：1500 mAJESD-30 代码：O-CXDB-X4
元件数量：1端子数量：4
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：700 A
断态重复峰值电压：1700 V重复峰值反向电压：1190 V
表面贴装：YES端子形式：UNSPECIFIED
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SYMMETRICAL GTO SCRBase Number Matches：1

H0700KC17F 数据手册

 浏览型号H0700KC17F的Datasheet PDF文件第1页浏览型号H0700KC17F的Datasheet PDF文件第2页浏览型号H0700KC17F的Datasheet PDF文件第3页浏览型号H0700KC17F的Datasheet PDF文件第5页浏览型号H0700KC17F的Datasheet PDF文件第6页浏览型号H0700KC17F的Datasheet PDF文件第7页 
WESTCODE An IXYS Company  
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#  
1.7 Critical rate of rise of on-state current  
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The  
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum  
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt  
is possible. Where the device is required to operate with infrequent high current pulses, with natural  
commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual  
specific evaluation is required.  
1.8 Gate ratings  
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-  
off (see diagram 10) to exceed VRGM which is the implied DC condition.  
1.9 Minimum permissible off time.  
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in  
the ratings applies only to operating conditions of ratings note 2. For other operating conditions see the  
curves of figure 18.  
1.10 Minimum permissible on-time.  
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a  
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges  
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time  
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode  
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon  
the di/dt and operating conditions (each case needs to be assessed on an individual basis).  
Data Sheet. Type H0700KC17# Issue 1  
Page 4 of 15  
April, 2004  
1234567...15

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