5秒后页面跳转
H0700KC14Y PDF预览

H0700KC14Y

更新时间: 2024-01-03 18:44:29
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
15页 484K
描述
Symmetrical GTO SCR

H0700KC14Y 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

H0700KC14Y 数据手册

 浏览型号H0700KC14Y的Datasheet PDF文件第3页浏览型号H0700KC14Y的Datasheet PDF文件第4页浏览型号H0700KC14Y的Datasheet PDF文件第5页浏览型号H0700KC14Y的Datasheet PDF文件第7页浏览型号H0700KC14Y的Datasheet PDF文件第8页浏览型号H0700KC14Y的Datasheet PDF文件第9页 
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC14# to H0700KC17#  
2.5 Gate trigger characteristics.  
These are measured by slowly ramping up the gate current and monitoring the transition of anode  
current and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction  
temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger  
voltage, however, the curves of figure 1 give the range of gate forward characteristics, for the full  
allowable junction temperature range. The curves of figures 1 & 6 should be used in conjunction, when  
considering forward gate drive circuit requirement. The gate drive requirements should always be  
calculated for lowest junction temperature start-up condition.  
Anode current  
Feedback  
0.9VAK  
R1  
Not to scale  
Current-  
sence  
CT  
Gate current  
C1  
Vs  
0.1IA  
IGT  
Anode-Cathode  
Voltage  
DUT  
Gate-drive  
Diagram 7, Gate trigger circuit and waveforms.  
2.6 Turn-on characteristics  
The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a  
circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc  
discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source  
continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt  
respectively, VD and i are also adjustable.  
Lc  
Cc  
R1  
CT  
Tx  
D
i
Cd  
Vd  
DUT  
Gate-drive  
Diagram 8, Turn-on test circuit of FT40.  
The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate  
circuit conditions IGM & IG are fully adjustable, IGM duration 10µs.  
diG/dt  
IG  
IGM  
td  
tr  
di/dt  
ITM  
VD  
VD=VDM  
tgt  
Eon integral  
period  
Diagram 9, Turn-on wave-diagrams.  
Data Sheet. Type H0700KC14# to H0700KC17# Issue 2  
Page 6 of 15  
September, 2012  

与H0700KC14Y相关器件

型号 品牌 描述 获取价格 数据表
H0700KC17D IXYS Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1360V V(RRM), 1 Element,

获取价格

H0700KC17E IXYS Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1275V V(RRM), 1 Element

获取价格

H0700KC17F IXYS Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1190V V(RRM), 1 Element

获取价格

H0700KC17G IXYS Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 1105V V(RRM), 1 Element

获取价格

H0700KC17J IXYS Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 935V V(RRM), 1 Element

获取价格

H0700KC17K IXYS Silicon Controlled Rectifier, 700 A, 1700 V, SYMMETRICAL GTO SCR

获取价格