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GWM120-0075X1-SL

更新时间： 2024-11-23 13:08:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 303K
描述
Power Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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GWM120-0075X1-SL 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-F17Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.7
Is Samacsys：N外壳连接：ISOLATED
配置：BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：110 A最大漏极电流 (ID)：110 A
最大漏源导通电阻：0.0049 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F17元件数量：6
端子数量：17工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

GWM120-0075X1-SL 数据手册

 浏览型号GWM120-0075X1-SL的Datasheet PDF文件第2页浏览型号GWM120-0075X1-SL的Datasheet PDF文件第3页浏览型号GWM120-0075X1-SL的Datasheet PDF文件第4页浏览型号GWM120-0075X1-SL的Datasheet PDF文件第5页浏览型号GWM120-0075X1-SL的Datasheet PDF文件第6页 
GWM 120-0075X1  
VDSS  
ID25  
= 75 V  
= 110 A  
Three phase full Bridge  
with Trench MOSFETs  
in DCB isolated high current package  
RDSon typ. = 4.0 mW  
L+  
G3  
G5  
S5  
G1  
S1  
S3  
L1  
L2  
L3  
Straight leads  
Surface Mount Device  
G4  
S4  
G6  
S6  
G2  
S2  
L-  
Applications  
MOSFETs  
Symbol  
VDSS  
AC drives  
• in automobiles  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
75  
20  
V
- electric power steering  
- starter generator  
• in industrial vehicles  
- propulsion drives  
- fork lift drives  
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
110  
85  
A
A
• in battery supplied equipment  
IF25  
IF90  
TC = 25°C (diode)  
TC = 90°C (diode)  
110  
80  
A
A
Features  
• MOSFETs in trench technology:  
- low RDSon  
- optimized intrinsic reverse diode  
• package:  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
- high level of integration  
- high current capability 300 A max.  
- aux. terminals for MOSFET control  
- terminals for soldering or welding  
connections  
- isolated DCB ceramic base plate  
with optimized heat transfer  
• Space and weight savings  
RDSon  
on chip level at  
VGS = 10 V; ID = 60 A  
TVJ = 25°C  
TVJ = 125°C  
4.0  
7.2  
4.9  
8.4  
mW  
mW  
VGS(th)  
IDSS  
VDS = 20 V; ID = 1 mA  
VDS = VDSS; VGS = 0 V  
2
4
1
V
TVJ = 25°C  
TVJ = 125°C  
µA  
mA  
0.1  
IGSS  
VGS  
=
20 V; VDS = 0 V  
0.2  
µA  
Qg  
Qgs  
Qgd  
115  
30  
30  
nC  
nC  
nC  
Package options  
VGS = 10 V; VDS = 36 V; ID = 25 A  
• 2 lead forms available  
- straight leads (SL)  
- SMD lead version (SMD)  
td(on)  
tr  
td(off)  
tf  
130  
100  
500  
100  
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 30 V  
ID = 80 A; RG = 39 Ω  
inductive load  
TVJ = 125°C  
Eon  
Eoff  
Erecoff  
0.20  
0.50  
0.01  
mJ  
mJ  
mJ  
RthJC  
RthJH  
1.0 K/W  
1.6 K/W  
with heat transfer paste (IXYS test setup)  
1.3  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110407d  
1 - 6  
123456

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