Datasheet > GWM160-0055X1

GWM160-0055X1

更新时间： 2024-11-19 10:37:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	302K
描述
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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中文翻译

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GWM160-0055X1 数据手册

GWM 160-0055X1

V_DSS

I_D25

= 55 V

= 150 A

Three phase full Bridge

with Trench MOSFETs

in DCB isolated high current package

R_{DSon typ.}= 2.7 mW

L+

Straight leads

Surface Mount Device

L-

Applications

MOSFETs

Symbol

V_DSS

AC drives

• in automobiles

Conditions

Maximum Ratings

T_J= 25°C to 150°C

- electric power steering

- starter generator

• in industrial vehicles

- propulsion drives

- fork lift drives

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

150

115

• in battery supplied equipment

I_F25

I_F90

T_C= 25°C (diode)

T_C= 90°C (diode)

120

Features

• MOSFETs in trench technology:

- low RDSon

- optimized intrinsic reverse diode

• package:

Symbol

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise speciﬁed)

min. typ. max.

- high level of integration

- high current capability 300 A max.

- aux. terminals for MOSFET control

- terminals for soldering or welding

connections

- isolated DCB ceramic base plate

with optimized heat transfer

• Space and weight savings

R_DSon

on chip level at

T_J= 25°C

T_J= 125°C

2.7

4.5

3.3

V_GS= 10 V; I_D= 100 A

V_GS(th)

I_DSS

V_DS= 20 V; I_D= 1 mA

V_DS= V_DSS; V_GS= 0 V

2.5

4.5

T_J= 25°C

T_J= 125°C

µA

0.1

I_GSS

V_GS

20 V; V_DS= 0 V

0.2

µA

Q_g

Q_gs

Q_gd

105

tbd

Package options

V_GS= 10 V; V_DS= 12 V; I_D= 160 A

• 2 lead forms available

- straight leads (SL)

- SMD lead version (SMD)

t_d(on)

t_r

t_d(off)

t_f

140

125

550

120

inductive load

V_GS= 10 V; V_DS= 24 V

I_D= 100 A; R_G= 39 Ω;

T_J= 125°C

E_on

E_off

E_recoff

0.17

0.60

0.004

R_thJC

R_thJH

1.0 K/W

1.6 K/W

with heat transfer paste (IXYS test setup)

= I_D·(R_DS(on)+ 2R_{Pin to Chip})

1.3

IXYS reserves the right to change limits, test conditions and dimensions.

20110307i

1 - 6

12 3 4 5 6

中文翻译

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与GWM160-0055X1相关器件

型号	品牌	获取价格	描述	数据表
GWM160-0055X1-BL	IXYS	获取价格	Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, M
GWM160-0055X1-SL	IXYS	获取价格	Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, M
GWM160-0055X1-SMD	IXYS	获取价格	Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, M
GWM180-004X2	IXYS	获取价格	Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
GWM180-004X2-SL	IXYS	获取价格	Power Field-Effect Transistor, 180A I(D), 40V, 0.0025ohm, 6-Element, N-Channel, Silicon, M
GWM180-004X2-SMD	IXYS	获取价格	Power Field-Effect Transistor, 180A I(D), 40V, 0.0025ohm, 6-Element, N-Channel, Silicon, M
GWM220-004P3	IXYS	获取价格	Three phase full bridge with Trench MOSFETs in DCB isolated high current package
GWM220-004P3-BL	IXYS	获取价格	Power Field-Effect Transistor, 180A I(D), 40V, 0.0026ohm, 6-Element, N-Channel, Silicon, M
GWM60-0055X-BL	IXYS	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 55V, 6-Element, N-Channel, Silicon, Meta
GWM60-0055X-SL	IXYS	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 55V, 6-Element, N-Channel, Silicon, Meta

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