MFlaot Gnaion,lHitighhiIcP3Amplifier Die
GVA-63-D+
50Ω
0.01 to 6 GHz
The Big Deal
• High gain, up to 22 dB
•
1.3 dB Gain flatness over 0.05 to 3 GHz
• Broadband high dynamic range without
external matching components
Product Overview
GVA-63-D+ is a wideband amplifier die fabricated using InGaP HBT technology, offering high gain over a
broad frequency range and high IP3. It provides good input and Output return loss over a broad frequency
range without the need for external matching components. Provided as an unpackaged amplifier die on
GaAs, this model allows easy integration directly into the user’s hybrids.
Key Features
Feature
Advantages
Broadband, 0.01 to 6.0 GHz
Covers the primary wireless communications bands: cellular, PCS, LTE, and WiMAX
High gain reduces the number of gain stages, saving board space, reducing component,
and lowering overall system cost.
High gain, up to 22 dB.
Good Gain flatness:
•
•
1.3 dB over 0.05 to 3 GHz
0.6 dB over 0.ꢀ to 2.6 GHz
Eliminates the need for gain flattening using external components.
The GVA-63-D+ matches industry leading IP3 performance relative to device size and
power consumption. The combination of the design and InGaP HBT structure provides
enhanced linearity over a broad frequency range, evident in IP3 values typically 14 dB
above the P1dB point to 0.8 GHz. This feature makes this amplifier ideal for use in:
• Driver amplifiers for complex waveform up converter paths
High IP3 versus DC power consumption
• +32 dBm typical at 0.05 GHz
• +33 dBm typical at 0.8 GHz
• Drivers in linearized transmit systems
GVA-63-D+ provides input and Output return loss of 10 to 21 dB up to 6 GHz without
the need for external matching components, saving real estate and reducing component
count.
No External Matching Components
Required
Unpackaged die
Enables user to integrate the amplifier directly into hybrids.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
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