Datasheet > GVA-84-DG+

GVA-84-DG+

更新时间： 2024-10-28 20:57:11

品牌	Logo	应用领域
MINI		射频微波
页数	文件大小	规格书
5页	255K
描述
Wide Band Low Power Amplifier,

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中文翻译

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技术参数
数据手册

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GVA-84-DG+ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.66	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

GVA-84-DG+ 数据手册

M^{5 V}o^oltn^{, H}o^igl^hit^Gh^aiⁱⁿc Ampliﬁer Die

GVA-84-D+

50Ω

DC to 7 GHz

Product Features

• High Gain, 24 dB typ. at 100 MHz

• High Pout, P1dB 20.5 dBm typ. at 100 MHz

• High IP3, 37 dBm typ. at 100 MHz

• Ruggedized design

• Fixed 5V operation

• Transient protected, US patent 6,943,629

+RoHS Compliant

The +Suffix identifies RoHS Compliance. See our web site

for RoHS Compliance methodologies and qualifications

Ordering Information: Refer to Last Page

Typical Applications

• Base station infrastructure

• Portable Wireless

• CATV & DBS

• MMDS & Wireless LAN

• LTE

General Description

GVA-84-D+ (RoHS compliant) is a wideband high gain ampliﬁer die offering high dynamic range. It uses

patented Transient Protected Darlington conﬁguration and is fabricated using InGaP HBT technology.

Simpliﬁed Schematic and Pad description

RF-OUT and DC-IN

RF IN

GROUND

Pad

Description

RF input pad. This pad requires the use of an external DC blocking capacitor

chosen for the frequency of operation.

RF IN

RF output and bias pad. DC voltage is present on this pad; therefore a DC block-

ing capacitor is necessary for proper operation. An RF choke is needed to feed

DC bias without loss of RF signal due to the bias connection.

RF-OUT and DC-IN

GND

Connections to ground. Use via holes as shown in “Suggested Layout for PCB

Design” to reduce ground path inductance for best performance.

REV. OR

M157233

GVA-84-D+

MCL NY

160722

Page 1 of 5

Mini-Circuits

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com

12 3 4 5

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