Datasheet > GT60M303-Q

GT60M303-Q

更新时间： 2024-11-15 12:48:43

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高功率电源
页数	文件大小	规格书
6页	420K
描述
HIGH POWER SWITCHING APPLICATIONS

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中文翻译

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数据手册

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GT60M303-Q 数据手册

GT60M303

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT60M303

HIGH POWER SWITCHING APPLICATIONS

Unit: mm

z Fourth generation IGBT

z FRD included between emitter and collector

z Enhancement mode type

z High speed

I : t = 0.25μs (TYP.)

GBT f

FRD : t = 0.7μs (TYP.)

z Low saturation voltage

: V

= 2.1V (TYP.)

CE (sat)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

Gate−Emitter Voltage

900

±25

CES

GES

Collector Current

1ms

120

ECF

Emitter−Collector

Foward Current

JEDEC

JEITA

⎯

1ms

120

ECFP

Collector Power Dissipation

(Tc = 25°C)

170

TOSHIBA

2-21F2C

Junction Temperature

Storage Temperature Range

Screw Torque

150

−55~150

0.8

°C

Weight: 9.75 g (typ.)

stg

―

N·m

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

EQUIVALENT CIRCUIT

MARKING

Part No. (or abbreviation code)

Lot No.

TOSHIBA

GT60M303

JAPAN

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6

中文翻译

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