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GT28F400B3T150 PDF预览

GT28F400B3T150

更新时间： 2024-11-20 23:14:55
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
49页 426K
描述
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

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中文翻译

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GT28F400B3T150 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：CSP, MICRO, BGA-48
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.92最长访问时间：150 ns
其他特性：USER SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK启动块：TOP
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
长度：7.91 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：8,7
端子数量：48字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA44,6X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：1.8/3.6,3/3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1 mm部门规模：4K,32K
最大待机电流：0.00001 A子类别：Flash Memories
最大压摆率：0.023 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：MOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NOR TYPE
宽度：6.5 mmBase Number Matches：1

GT28F400B3T150 数据手册

 浏览型号GT28F400B3T150的Datasheet PDF文件第2页浏览型号GT28F400B3T150的Datasheet PDF文件第3页浏览型号GT28F400B3T150的Datasheet PDF文件第4页浏览型号GT28F400B3T150的Datasheet PDF文件第5页浏览型号GT28F400B3T150的Datasheet PDF文件第6页浏览型号GT28F400B3T150的Datasheet PDF文件第7页 
PRELIMINARY  
E
SMART 3 ADVANCED BOOT BLOCK  
WORD-WIDE  
4-MBIT (256K X 16), 8-MBIT (512K X 16),  
16-MBIT (1024K X 16)  
FLASH MEMORY FAMILY  
28F400B3, 28F800B3, 28F160B3  
Flexible SmartVoltage Technology  
2.7V–3.6V Program/Erase  
Supports Code Plus Data Storage  
Optimized for FDI, Flash Data  
Integrator Software  
2.7V–3.6V Read Operation  
12V VPP Fast Production  
Programming  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
2.7V or 1.8V I/O Option  
Extended Cycling Capability  
10,000 Block Erase Cycles  
Reduces Overall System Power  
Optimized Block Sizes  
Eight 4-KW Blocks for Data,  
Top or Bottom Locations  
Up to Thirty-One 32-KW Blocks for  
Code  
Automated Word Program and Block  
Erase  
Command User Interface  
Status Registers  
SRAM-Compatible Write Interface  
Automatic Power Savings Feature  
High Performance  
2.7V–3.6V: 120 ns Max Access Time  
Reset/Deep Power-Down  
1 µA ICCTypical  
Block Locking  
VCC-Level Control through WP#  
Spurious Write Lockout  
Low Power Consumption  
Standard Surface Mount Packaging  
48-Ball µBGA* Package  
20 mA Maximum Read Current  
Absolute Hardware-Protection  
VPP = GND Option  
48-Lead TSOP Package  
Footprint Upgradeable  
Upgradeable from 2-, 4- and 8-Mbit  
Boot Block  
VCC Lockout Voltage  
Extended Temperature Operation  
–40°C to +85°C  
ETOX™ V (0.4 µ) Flash Technology  
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4µ technology, represents a feature-  
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability  
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been  
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and  
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.  
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,  
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Word-Wide  
products will be available in 48-lead TSOP and 48-ball µBGA* packages. Additional information on this  
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp.  
May 1997  
Order Number: 290580-002  
1234567...49

中文翻译

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