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GT28F640C3TC90 PDF预览

GT28F640C3TC90

更新时间: 2024-11-25 20:05:15
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
70页 945K
描述
Flash, 4MX16, 90ns, PBGA48, CSP, MICRO, BGA-48

GT28F640C3TC90 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.59
最长访问时间:90 ns其他特性:USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK
启动块:TOPJESD-30 代码:R-PBGA-B48
长度:13 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM类型:NOR TYPE
宽度:10 mmBase Number Matches:1

GT28F640C3TC90 数据手册

 浏览型号GT28F640C3TC90的Datasheet PDF文件第2页浏览型号GT28F640C3TC90的Datasheet PDF文件第3页浏览型号GT28F640C3TC90的Datasheet PDF文件第4页浏览型号GT28F640C3TC90的Datasheet PDF文件第5页浏览型号GT28F640C3TC90的Datasheet PDF文件第6页浏览型号GT28F640C3TC90的Datasheet PDF文件第7页 
3 Volt Advanced+ Boot Block Flash  
Memory  
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)  
Preliminary Datasheet  
Product Features  
Flexible SmartVoltage Technology  
2.7 V–3.6 V Read/Program/Erase  
12 V for Fast Production Programming  
High Performance  
128-bit Protection Register  
64-bit Unique Device Identifier  
64-bit User Programmable OTP Cells  
Extended Cycling Capability  
2.7 V–3.6 V: 70 ns Max Access Time  
Minimum 100,000 Block Erase Cycles  
Optimized Architecture for Code Plus Data Supports Intel® Flash Data Integrator  
Storage  
Software  
Eight 4-Kword Blocks, Top or Bottom  
Locations  
Up to One Hundred-Twenty-Seven 32-  
Kword Blocks  
Flash Memory Manager  
System Interrupt Manager  
Supports Parameter Storage, Streaming  
Data (e.g., voice)  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
Flexible Block Locking  
Lock/Unlock Any Block  
Full Protection on Power-Up  
WP# Pin for Hardware Block Protection  
VPP = GND Option  
Automated Word/Byte Program and Block  
Erase  
Command User Interface  
Status Registers  
Cross-Compatible Command Support  
Intel Basic Command Set  
Common Flash Interface  
Standard Surface Mount Packaging  
48-Ball CSP Packages  
64-Ball Easy BGA Packages  
48-Lead TSOP Package  
ETOX™ VII (0.18 µ) Flash Technology  
VCC Lockout Voltage  
Low Power Consumption  
—9 mA Typical Read Power  
—7 µA Typical Standby Power with  
Automatic Power Savings Feature  
12 V Fast Production Program  
Extended Temperature Operation  
40 °C to +85 °C  
28F160/320/640C3xC  
8-, 16- and 32-Mbit also exist on  
ETOX™ VI (0.25 µ) Flash Technology  
The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ  
technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+  
Boot Block Flash memory devices incorporate low voltage capability (2.7 V read, program and  
erase) with high-speed, low-power operation. Flexible block locking allows any block to be  
independently locked or unlocked. Add to this the Intel® Flash Data Integrator (IFDI) software  
and you have a cost-effective, flexible, monolithic code plus data storage solution. Intel® 3 Volt  
Advanced+ Boot Block products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball  
Easy BGA packages. Additional information on this product family can be obtained by  
accessing the Intel® Flash website: http://www.intel.com/design/flash.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290645-010  
October 2000  

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