Datasheet > GT28F640W18B70

GT28F640W18B70

更新时间： 2024-11-21 14:50:39

品牌	Logo	应用领域
英特尔 - INTEL		内存集成电路闪存
页数	文件大小	规格书
84页	973K
描述
Flash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56

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技术参数
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GT28F640W18B70 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	BGA	包装说明：	VFBGA, BGA56,7X8,30
针数：	56	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.26	Is Samacsys：	N
最长访问时间：	70 ns	其他特性：	ALSO SUPPORTS SYNCHRONOUS OPERATION
启动块：	BOTTOM	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	NO
JESD-30 代码：	R-PBGA-B56	JESD-609代码：	e0
长度：	9 mm	内存密度：	67108864 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	8,127
端子数量：	56	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装等效代码：	BGA56,7X8,30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小：	4 words	并行/串行：	PARALLEL
电源：	1.8 V	编程电压：	1.8 V
认证状态：	Not Qualified	座面最大高度：	1 mm
部门规模：	4K,32K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.04 mA
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
切换位：	NO	类型：	NOR TYPE
宽度：	7.7 mm	Base Number Matches：	1

GT28F640W18B70 数据手册

1.8 Volt Intel^®Wireless Flash Memory

(W18)

28F320W18, 28F640W18, 28F128W18

Preliminary Datasheet

Product Features

■ Performance

■ Software

— 5 µs (Typ) Program Suspend

— 70 ns Asynchronous reads for 32 and 64 Mbit,

90 ns for 128 Mbit

— 5 µs (Typ) Erase Suspend

— Intel^®Flash Data Integrator (FDI) Software

Optimized

— 14 ns Clock to Data Output (t

— 20 ns Page Mode Read Speed

)

CHQV

— 4-Word, 8-Word, and Continuous-Word Burst

— Intel Basic Command Set Compatible

— Common Flash Interface (CFI)

■ Quality and Reliability

— Extended Temperature: –40 °C to +85 °C

— Minimum 100,000 Erase Cycles per Block

— ETOX™ VII Flash Technology (0.18 µm)

■ Security

Modes

— Burst and Page Modes in Parameter and Main

Partitions

— Programmable WAIT Configuration

— Enhanced Factory Programming Mode@

3.50 µs/Word (Typ)

— Glueless 12 V interface for Fast Factory

Programming @ 8 µs/Word (Typ)

— 1.8 V Low-Power Programming @ 12 µs/Word

(Typ)

— 128-bit Protection Register: 64 Unique Device

Identifier Bits; 64 User-Programmable OTP

Bits

— Absolute Write Protection

= GND

— Program or Erase during Reads

■ Architecture

— Erase/Program Lockout during Power

Transitions

— Multiple 4-Mbit Partitions

— Dual-Operation: Read-While-Write or Read-

While-Erase

— Individual Dynamic Zero-Latency Block

Locking

— Individual Block Lock-Down

■ Density and Packaging

— Eight, 4-Kword Parameter Code and Data

Blocks

— 32 Mbit and 128 Mbit in a VF BGA Package

— 64 Mbit in a µBGA*Package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

µBGA* and VF BGA Packages

— 32-Kword Main Code and Data Blocks

— Top and Bottom Parameter Configurations

■ Power Operation

— 1.7 V to 1.95 V Read and Write Operations

— 16-bit wide Data Bus

— 1.7 V to 2.24 V V

for I/O Isolation

CCQ

— Standby Current: 5 µA (Typ)

— Read Current: 7 mA (Typ)

The 1.8 Volt Intel^®Wireless Flash memory with flexible multi-partition dual-operation provides high-

performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.

Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel Wireless Flash

memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from

slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases

reliability and reduces overall system power consumption and cost.

The 1.8 Volt Intel Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing to

occur in one partition while reading from another partition. This allows for higher data write throughput

compared to single partition architectures. The dual-operation architecture also allows two processors to

interleave code operations while program and erase operations take place in the background. The designer can

also choose the size of the code and data partitions via the flexible multi-partition architecture.

The 1.8 Volt Intel Wireless Flash memory is manufactured on Intel’s 0.18 µm ETOX™ VII process technology. It

is available in µBGA and VF BGA packages which are ideal for board-constrained applications.

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

290701-003

June 2001

12 3 4 5 6 7...84

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与GT28F640W18B70相关器件

型号	品牌	获取价格	描述	数据表
GT28F640W18B85	NUMONYX	获取价格	Flash, 4MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56
GT28F640W18B90	INTEL	获取价格	Flash, 4MX16, 90ns, PBGA56
GT28F640W18BC60	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F640W18BC70	INTEL	获取价格	Flash, 4MX16, 70ns, PBGA56
GT28F640W18BC80	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F640W18BC85	INTEL	获取价格	Flash, 4MX16, 85ns, PBGA56
GT28F640W18BD60	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F640W18BD80	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F640W18T70	NUMONYX	获取价格	Flash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56
GT28F640W18T85	NUMONYX	获取价格	Flash, 4MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56

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