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GT28F320S3-110 PDF预览

GT28F320S3-110

更新时间： 2024-11-21 20:04:11
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路闪存
页数 文件大小 规格书
52页 1253K
描述
Flash, 2MX16, 110ns, PBGA56

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中文翻译

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GT28F320S3-110 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FBGA, BGA56,9X8,30Reach Compliance Code：unknown
风险等级：5.92最长访问时间：110 ns
备用内存宽度：8命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：R-PBGA-B56JESD-609代码：e0
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：64
端子数量：56字数：2097152 words
字数代码：2000000最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA56,9X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH页面大小：16/32 words
并行/串行：PARALLEL电源：3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：64K最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.03 mA
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
切换位：NO类型：NOR TYPE
Base Number Matches：1

GT28F320S3-110 数据手册

 浏览型号GT28F320S3-110的Datasheet PDF文件第2页浏览型号GT28F320S3-110的Datasheet PDF文件第3页浏览型号GT28F320S3-110的Datasheet PDF文件第4页浏览型号GT28F320S3-110的Datasheet PDF文件第5页浏览型号GT28F320S3-110的Datasheet PDF文件第6页浏览型号GT28F320S3-110的Datasheet PDF文件第7页 
ADVANCE INFORMATION  
E
WORD-WIDE  
FlashFile™ MEMORY FAMILY  
28F160S3, 28F320S3  
Includes Extended Temperature Specifications  
Two 32-Byte Write Buffers  
Cross-Compatible Command Support  
Intel Standard Command Set  
2.7 µs per Byte Effective  
Programming Time  
Common Flash Interface (CFI)  
Scaleable Command Set (SCS)  
Low Voltage Operation  
2.7V or 3.3V VCC  
100,000 Block Erase Cycles  
2.7V, 3.3V or 5V VPP  
Enhanced Data Protection Features  
Absolute Protection with VPP = GND  
Flexible Block Locking  
100 ns Read Access Time (16 Mbit)  
110 ns Read Access Time (32 Mbit)  
Block Erase/Program Lockout  
during Power Transitions  
High-Density Symmetrically-Blocked  
Architecture  
32 64-Kbyte Erase Blocks (16 Mbit)  
64 64-Kbyte Erase Blocks (32 Mbit)  
Configurable x8 or x16 I/O  
Automation Suspend Options  
Program Suspend to Read  
System Performance Enhancements  
STS Status Output  
Block Erase Suspend to Program  
Block Erase Suspend to Read  
Industry-Standard Packaging  
µBGA* package, SSOP, and  
TSOP (16 Mbit)  
ETOX™ V Nonvolatile Flash  
Technology  
µBGA* package and SSOP (32 Mbit)  
Intel’s Word-Wide FlashFile™ memory family provides high-density, low-cost, non-volatile, read/write storage  
solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various  
densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended  
cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.  
Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure  
code storage applications, such as networking, where code is either directly executed out of flash or  
downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection  
with VPP at GND, selective block locking, and program/erase lockout during power transitions. These  
alternatives give designers ultimate control of their code security needs.  
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. It comes in the  
industry-standard 56-lead SSOP and µBGA packages. In addition, the 16-Mb device is available in the  
industry-standard 56-lead TSOP package.  
June 1997  
Order Number: 290608-001  
1234567...52

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 		Intel㈢ Wireless Flash Memory
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GT28F320W18T70 NUMONYX

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 		Flash, 2MX16, 70ns, PBGA56, VFBGA-56
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 		Flash, 2MX16, 85ns, PBGA56, VFBGA-56

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