1.8 Volt Intel® Wireless Flash Memory
(W18)
28F320W18, 28F640W18, 28F128W18
Preliminary Datasheet
Product Features
■ High Performance
■ Software
— 5 µs (Typ) Program Suspend
— 70 ns Initial Access Speed
— 14 ns Clock to Data Output Zero Wait-State
— 5 µs (Typ) Erase Suspend
— Intel® Flash Data Integrator (IFDI) Software
Optimized
Synchronous Burst Mode
— 20 ns Page Mode Read Speed
— 4-, 8-, and Continuous Word Burst Modes
— Burst and Page Modes in Both Parameter and
Main Partitions
— Intel Basic Command Set Compatible
— Common Flash Interface (CFI)
■ Quality and Reliability
— Programmable WAIT Configuration
— Enhanced Factory Programming Mode:
3.50 µs/Word (Typ)
— Glueless 12 V interface for Fast Factory
Programming @ 8 µs/Word (Typ)
— 1.8 V Low-Power Programming @ 12 µs/Word
(Typ)
— Extended Temperature –40 °C to +85 °C
— Minimum 100K Block Erase Cycles
— ETOX™ VII Flash Technology (0.18 µm)
■ Security
— 128-Bit Protection Register: 64 Unique Device
Identifier Bits; 64 User-Programmable OTP
Bits
— Program or Erase during Reads
■ Architecture
— Absolute Write Protection
V
= GND
PP
— Erase/Program Lockout during Power
— Multiple 4-Mbit Partitions
Transitions
— Dual-Operation: RWW or RWE (Read-While -
— Individual Dynamic Zero-Latency Block
Locking
■ Density and Packaging
Write or Read-While-Erase)
— Eight, 4-Kword Parameter Code/Data Blocks
— 32-Kword Main Code/Data Blocks
— Top and Bottom Parameter Configurations
■ Power Operation
— 32-Mbit in a VF BGA Package
— 64-Mbit and 128-Mbit in µBGA*Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 1.65 V to 1.95 V Read and Write Operations
µBGA* and VF BGA Packages
— 1.65 V to 1.95 V V
for I/O Isolation
CCQ
— 16-Bit Wide Data Bus
— Standby Current: 5 µA (Typ)
— 40/52/66 MHz 4-word Sync Read
Current: 7 mA (Typ)
The 1.8 Volt Intel® Wireless Flash memory with flexible multi-partition dual-operation provides high-
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.
Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel® Wireless Flash
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases
reliability and reduces overall system power consumption and cost.
The 1.8 Volt Intel® Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing
to occur in one partition while reading from another partition. This allows for higher data write throughput
compared to single partition architectures. The dual-operation architecture also allows two processors to
interleave code operations while program and erase operations take place in the background. The designer can
also choose the size of the code and data partitions via the flexible multi-partition architecture.
The 1.8 Volt Intel® Wireless Flash memory is manufactured on Intel® 0.18 µm ETOX™ VII process technology.
It is available in µBGA and VF BGA packages, which are ideal for board-constrained applications.
Notice: This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290701-001
October 2000