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GT28F320W18B85 PDF预览

GT28F320W18B85

更新时间: 2024-11-26 05:53:11
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
80页 944K
描述
Flash, 2MX16, 85ns, PBGA56, VFBGA-56

GT28F320W18B85 数据手册

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1.8 Volt Intel® Wireless Flash Memory  
(W18)  
28F320W18, 28F640W18, 28F128W18  
Preliminary Datasheet  
Product Features  
High Performance  
Software  
— 5 µs (Typ) Program Suspend  
— 70 ns Initial Access Speed  
— 14 ns Clock to Data Output Zero Wait-State  
— 5 µs (Typ) Erase Suspend  
— Intel® Flash Data Integrator (IFDI) Software  
Optimized  
Synchronous Burst Mode  
— 20 ns Page Mode Read Speed  
— 4-, 8-, and Continuous Word Burst Modes  
— Burst and Page Modes in Both Parameter and  
Main Partitions  
— Intel Basic Command Set Compatible  
— Common Flash Interface (CFI)  
Quality and Reliability  
— Programmable WAIT Configuration  
— Enhanced Factory Programming Mode:  
3.50 µs/Word (Typ)  
— Glueless 12 V interface for Fast Factory  
Programming @ 8 µs/Word (Typ)  
— 1.8 V Low-Power Programming @ 12 µs/Word  
(Typ)  
— Extended Temperature –40 °C to +85 °C  
— Minimum 100K Block Erase Cycles  
— ETOX™ VII Flash Technology (0.18 µm)  
Security  
— 128-Bit Protection Register: 64 Unique Device  
Identifier Bits; 64 User-Programmable OTP  
Bits  
— Program or Erase during Reads  
Architecture  
— Absolute Write Protection  
V
= GND  
PP  
— Erase/Program Lockout during Power  
— Multiple 4-Mbit Partitions  
Transitions  
— Dual-Operation: RWW or RWE (Read-While -  
— Individual Dynamic Zero-Latency Block  
Locking  
Density and Packaging  
Write or Read-While-Erase)  
— Eight, 4-Kword Parameter Code/Data Blocks  
— 32-Kword Main Code/Data Blocks  
— Top and Bottom Parameter Configurations  
Power Operation  
— 32-Mbit in a VF BGA Package  
— 64-Mbit and 128-Mbit in µBGA*Package  
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch  
— 1.65 V to 1.95 V Read and Write Operations  
µBGA* and VF BGA Packages  
— 1.65 V to 1.95 V V  
for I/O Isolation  
CCQ  
— 16-Bit Wide Data Bus  
— Standby Current: 5 µA (Typ)  
— 40/52/66 MHz 4-word Sync Read  
Current: 7 mA (Typ)  
The 1.8 Volt Intel® Wireless Flash memory with flexible multi-partition dual-operation provides high-  
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.  
Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel® Wireless Flash  
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from  
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases  
reliability and reduces overall system power consumption and cost.  
The 1.8 Volt Intel® Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing  
to occur in one partition while reading from another partition. This allows for higher data write throughput  
compared to single partition architectures. The dual-operation architecture also allows two processors to  
interleave code operations while program and erase operations take place in the background. The designer can  
also choose the size of the code and data partitions via the flexible multi-partition architecture.  
The 1.8 Volt Intel® Wireless Flash memory is manufactured on Intel® 0.18 µm ETOX™ VII process technology.  
It is available in µBGA and VF BGA packages, which are ideal for board-constrained applications.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290701-001  
October 2000  

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