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GS880Z36BGT-133 PDF预览

GS880Z36BGT-133

更新时间: 2024-11-26 07:53:31
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
23页 684K
描述
ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, TQFP-100

GS880Z36BGT-133 数据手册

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GS880Z18/36BT-250/225/200/166/150/133  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
250 MHz133 MHz  
9Mb Pipelined and Flow Through  
2.5 V or 3.3 V VDD  
2.5 V or 3.3 V I/O  
Synchronous NBT SRAM  
Features  
Functional Description  
• NBT (No Bus Turn Around) functionality allows zero wait  
read-write-read bus utilization; Fully pin-compatible with  
both pipelined and flow through NtRAM™, NoBL™ and  
ZBT™ SRAMs  
The GS880Z18/36BT is a 9Mbit Synchronous Static SRAM.  
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other  
pipelined read/double late write or flow through read/single  
late write SRAMs, allow utilization of all available bus  
bandwidth by eliminating the need to insert deselect cycles  
when the device is switched from read to write cycles.  
• 2.5 V or 3.3 V +10%/10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• User-configurable Pipeline and Flow Through mode  
• LBO pin for Linear or Interleave Burst mode  
• Pin compatible with 2M, 4M, and 18M devices  
• Byte write operation (9-bit Bytes)  
Because it is a synchronous device, address, data inputs, and  
read/ write control inputs are captured on the rising edge of the  
input clock. Burst order control (LBO) must be tied to a power  
rail for proper operation. Asynchronous inputs include the  
Sleep mode enable (ZZ) and Output Enable. Output Enable can  
be used to override the synchronous control of the output  
drivers and turn the RAM's output drivers off at any time.  
Write cycles are internally self-timed and initiated by the rising  
edge of the clock input. This feature eliminates complex off-  
chip write pulse generation required by asynchronous SRAMs  
and simplifies input signal timing.  
• 3 chip enable signals for easy depth expansion  
• ZZ Pin for automatic power-down  
• JEDEC-standard 100-lead TQFP package  
-250 -225 -200 -166 -150 -133 Unit  
Pipeline  
3-1-1-1  
t
2.5 2.7 3.0 3.4 3.8 4.0 ns  
4.0 4.4 5.0 6.0 6.7 7.5 ns  
KQ  
tCycle  
Curr (x18) 280 255 230 200 185 165 mA  
Curr (x36) 330 300 270 230 215 190 mA  
3.3 V  
2.5 V  
The GS880Z18/36BT may be configured by the user to  
operate in Pipeline or Flow Through mode. Operating as a  
pipelined synchronous device, meaning that in addition to the  
rising edge triggered registers that capture input signals, the  
device incorporates a rising-edge-triggered output register. For  
read cycles, pipelined SRAM output data is temporarily stored  
by the edge triggered output register during the access cycle  
and then released to the output drivers at the next rising edge of  
clock.  
Curr (x18) 275 250 230 195 180 165 mA  
Curr (x36) 320 295 265 225 210 185 mA  
Flow  
Through  
2-1-1-1  
t
5.5 6.0 6.5 7.0 7.5 8.5 ns  
5.5 6.0 6.5 7.0 7.5 8.5 ns  
KQ  
tCycle  
Curr (x18) 175 165 160 150 145 135 mA  
Curr (x36) 200 190 180 170 165 150 mA  
3.3 V  
2.5 V  
Curr (x18) 175 165 160 150 145 135 mA  
Curr (x36) 200 190 180 170 165 150 mA  
The GS880Z18/36BT is implemented with GSI's high  
performance CMOS technology and is available in a JEDEC-  
Standard 100-pin TQFP package.  
Flow Through and Pipelined NBT SRAM Back-to-Back Read/Write Cycles  
Clock  
Address  
A
R
B
C
R
D
E
R
F
Read/Write  
W
W
W
Flow Through  
Data I/O  
Q
D
Q
D
D
Q
E
A
B
C
D
Pipelined  
Data I/O  
Q
Q
D
Q
E
A
B
C
D
Rev: 1.00b 12/2002  
1/23  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.  

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