GS880E18/32/36BT-333/300/250/200/150
250 MHz–150 MHz
100-Pin TQFP
Commercial Temp
Industrial Temp
512K x 18, 256K x 32, 256K x 36
9Mb Sync Burst SRAMs
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Flow Through/Pipeline Reads
Features
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
• FT pin for user-configurable flow through or pipeline
operation
• Dual Cycle Deselect (DCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
DCD Pipelined Reads
The GS880E18/32/36BT is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Functional Description
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Applications
The GS880E18/32/36BT is a 9,437,184-bit (8,388,608-bit for
x32 version) high performance synchronous SRAM with a 2-
bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Core and Interface Voltages
The GS880E18/32/36BT operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
) pins are used to decouple output noise
DDQ
from the internal circuits and are 3.3 V and 2.5 V compatible.
Paramter Synopsis
-333
-300
-250
-200
-150
Unit
tKQ
2.5
3.0
2.5
3.3
2.5
4.0
3.0
5.0
3.8
6.7
ns
ns
tCycle
Pipeline
3-1-1-1
Curr (x18)
Curr (x32/x36)
250
290
230
265
200
230
170
195
140
160
mA
mA
tKQ
4.5
4.5
5.0
5.0
5.5
5.5
6.5
6.5
7.5
7.5
ns
ns
tCycle
Flow Through
2-1-1-1
Curr (x18)
Curr (x32/x36)
200
230
185
210
160
185
140
160
128
145
mA
mA
Rev: 1.02 10/2004
1/28
© 2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5秒后页面跳转
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
AMD宣布全球裁员约1000人，调整战略聚焦增长
英伟达新AI芯片Rubin或提前半年亮相
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
