Datasheet > GS8672T19BGE-300IT

GS8672T19BGE-300IT

更新时间： 2024-11-23 15:33:27

品牌	Logo	应用领域
GSI		时钟静态存储器内存集成电路
页数	文件大小	规格书
25页	345K
描述
Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

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GS8672T19BGE-300IT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.84	最长访问时间：	0.45 ns
最大时钟频率 (fCLK)：	300 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B165	长度：	17 mm
内存密度：	75497472 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	18	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	1.5,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.5 mm
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	0.91 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm
Base Number Matches：	1

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GS8672T19/37BE-450/400/375/333/300

72Mb SigmaDDR-II+^TM

Burst of 2 ECCRAM^TM

450 MHz–300 MHz

165-Bump BGA

Commercial Temp

Industrial Temp

1.8 V V

1.5 V I/O

Features

Clocking and Addressing Schemes

• On-Chip ECC with virtually zero SER

• 2.0 Clock Latency

• Simultaneous Read and Write SigmaDDR™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

The GS8672T19/37BE SigmaDDR-II+ ECCRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer.

• Byte Write Capability

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with 18Mb, 36Mb and 144Mb devices

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

Each internal read and write operation in a SigmaDDR-II+ B2

ECCRAM is two times wider than the device I/O bus. An input

data bus de-multiplexer is used to accumulate incoming data

before it is simultaneously written to the memory array. An

output data multiplexer is used to capture the data produced

from a single memory array read and then route it to the

appropriate output drivers as needed. Therefore the address

field of a SigmaDDR-II+ B2 ECCRAM is always one address

pin less than the advertised index depth (e.g., the 4M x 18 has

an 2M addressable index).

On-Chip Error Correction Code

SigmaDDR™ ECCRAM Overview

GSI's ECCRAMs implement an ECC algorithm that detects

and corrects all single-bit memory errors, including those

induced by Soft Error Rate (SER) events such as cosmic rays,

alpha particles etc. The resulting SER of these devices is

anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude

improvement over comparable SRAMs with no On-Chip ECC,

which typically have an SER of 200 FITs/Mb or more. SER

quoted above is based on reading taken at sea level.

The GS8672T19/37BE ECCRAMs are built in compliance

with the SigmaDDR-II+ SRAM pinout standard for Common

I/O synchronous ECCRAMs. They are 75,497,472-bit (72Mb)

ECCRAMs. The GS8672T19/37BE SigmaCIO ECCRAMs are

just one element in a family of low power, low voltage HSTL

I/O ECCRAMs designed to operate at the speeds needed to

implement economical high performance networking systems.

However, the On-Chip Error Correction (ECC) will be

disabled if a “Half Write” operation is initiated. See the Byte

Write Contol section for further information.

Parameter Synopsis

-450

2.2 ns

0.45 ns

-400

-375

-333

3.0 ns

0.45 ns

-300

3.3 ns

0.45 ns

tKHKH

tKHQV

2.5 ns

2.66 ns

0.45 ns

Rev: 1.02 1/2013

1/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...25

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与GS8672T19BGE-300IT相关器件

型号	品牌	获取价格	描述	数据表
GS8672T19BGE-400I	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA
GS8672T20	GSI	获取价格	72Mb SigmaDDR-IITM Burst of 2 ECCRAMTM
GS8672T20AE-400	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-400I	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-400T	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-450T	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-500I	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-500IT	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-500T	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165
GS8672T20AE-550IT	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165

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