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GS8672T20AE-500I PDF预览

GS8672T20AE-500I

更新时间: 2024-11-24 05:12:43
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
28页 982K
描述
Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165

GS8672T20AE-500I 数据手册

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Preliminary  
GS8672T20/38AE-550/500/450/400  
550 MHz–400 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
72Mb SigmaDDR-II+  
Burst of 2 ECCRAMTM  
1.8 V V  
DD  
1.5 V I/O  
Features  
Clocking and Addressing Schemes  
• 2.5 Clock Latency  
The GS8672T20/38AE SigmaDDR-II+ SRAMs are  
• On-Chip ECC with virtually zero SER  
• Simultaneous Read and Write SigmaDDR™ Interface  
• Common I/O bus  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• JEDEC-standard package  
• Double Data Rate interface  
• Byte Write capability  
• Burst of 2 Read and Write  
• On-Die Termination (ODT) on Data (D), Byte Write (BW),  
and Clock (K, K) outputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V HSTL Interface  
• Pipelined read operation with self-timed Late Write  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with future 144Mb and 288Mb devices  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Because Common I/O SigmaDDR-II+ ECCRAMs always  
transfer data in two packets, A0 is internally set to 0 for the  
first read or write transfer, and automatically incremented by 1  
for the next transfer. Because the LSB is tied off internally, the  
address field of a SigmaDDR-II+ B2 RAM is always one  
address pin less than the advertised index depth (e.g., the 4M x  
18 has a 2M addressable index).  
On-Chip Error Correction Code  
GSI's ECCRAMs implement an ECC algorithm that detects  
and corrects all single-bit memory errors, including those  
induced by Soft Error Rate (SER) events such as cosmic rays,  
alpha particles etc. The resulting SER of these devices is  
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude  
improvement over comparable SRAMs with no On-Chip ECC,  
which typically have an SER of 200 FITs/Mb or more. SER  
quoted above is based on reading taken at sea level.  
SigmaDDRFamily Overview  
The GS8672T20/38AE SigmaDDR-II+ ECCRAMs are built in  
compliance with the SigmaDDR-II+ SRAM pinout standard  
for Common I/O synchronous SRAMs. They are  
75,497,472-bit (72Mb) SRAMs. The GS8672T20/38AE  
SigmaDDR SRAMs are just one element in a family of low  
power, low voltage HSTL I/O SRAMs designed to operate at  
the speeds needed to implement economical high performance  
networking systems.  
However, the On-Chip Error Correction (ECC) will be  
disabled if a “Half Write” operation is initiated. See the Byte  
Write Contol section for further information.  
Parameter Synopsis  
-550  
-500  
2.0 ns  
0.45 ns  
-450  
2.2 ns  
0.45 ns  
-400  
2.5 ns  
0.45 ns  
tKHKH  
tKHQV  
1.81 ns  
0.45 ns  
Rev: 1.00 5/2010  
1/28  
© 2010, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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