5秒后页面跳转
GS8662T36BGD-167 PDF预览

GS8662T36BGD-167

更新时间: 2024-02-02 03:25:45
品牌 Logo 应用领域
GSI 双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
37页 1280K
描述
DDR SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8662T36BGD-167 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
针数:165Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.69最长访问时间:0.5 ns
其他特性:PIPELINED ARCHITECTURE, LATE WRITEJESD-30 代码:R-PBGA-B165
JESD-609代码:e1长度:15 mm
内存密度:75497472 bit内存集成电路类型:DDR SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX36
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13 mm
Base Number Matches:1

GS8662T36BGD-167 数据手册

 浏览型号GS8662T36BGD-167的Datasheet PDF文件第3页浏览型号GS8662T36BGD-167的Datasheet PDF文件第4页浏览型号GS8662T36BGD-167的Datasheet PDF文件第5页浏览型号GS8662T36BGD-167的Datasheet PDF文件第7页浏览型号GS8662T36BGD-167的Datasheet PDF文件第8页浏览型号GS8662T36BGD-167的Datasheet PDF文件第9页 
Preliminary  
GS8662T08/09/18/36BD-400/350/333/300/250  
Pin Description Table  
Symbol  
SA  
Description  
Synchronous Address Inputs  
No Connect  
Type  
Input  
Comments  
NC  
Read: Active High  
Write: Active Low  
R/W  
Synchronous Read/Write  
Synchronous Byte Writes  
Nybble Write Control Pin  
Input  
Input  
Input  
Active Low  
x18/x36 only  
BW0–BW3  
NW0–NW1  
Active Low  
x8 only  
LD  
K
Synchronous Load Pin  
Input Clock  
Input  
Input  
Active Low  
Active High  
K
Input Clock  
Input  
Active Low  
C
Output Clock  
Input  
Active High  
C
Output Clock  
Input  
Active Low  
TMS  
TDI  
TCK  
TDO  
VREF  
Test Mode Select  
Test Data Input  
Input  
Input  
Test Clock Input  
Input  
Test Data Output  
HSTL Input Reference Voltage  
Output Impedance Matching Input  
Must Connect Low  
Data I/O  
Output  
Input  
ZQ  
MCL  
DQ  
Input  
Input/Output  
Input  
Three State  
Active Low  
Disable DLL when low  
Output Echo Clock  
Output Echo Clock  
Power Supply  
Doff  
CQ  
Output  
Output  
Supply  
CQ  
VDD  
1.8 V Nominal  
VDDQ  
VSS  
Isolated Output Buffer Supply  
Power Supply: Ground  
Supply  
Supply  
1.8 V or 1.5 V Nominal  
Notes:  
1. NC = Not Connected to die or any other pin  
2. When ZQ pin is directly connected to V , output impedance is set to minimum value and it cannot be connected to ground or left  
DDQ  
unconnected.  
Rev: 1.01 11/2010  
6/37  
© 2010, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

与GS8662T36BGD-167相关器件

型号 品牌 描述 获取价格 数据表
GS8662T36BGD-167I GSI DDR SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

获取价格

GS8662T36BGD-167IT GSI DDR SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

获取价格

GS8662T36BGD-200 GSI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

获取价格

GS8662T36BGD-200T GSI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

获取价格

GS8662T36BGD-250 GSI 165 BGA

获取价格

GS8662T36BGD-250I GSI 165 BGA

获取价格